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首页> 外文期刊>Japanese journal of applied physics >Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar
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Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar

机译：GaAs Gunn二极管的发展及其在调频连续波雷达中的应用

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摘要

In this work, we have designed and fabricated the GaAs Gunn diodes for a 94 GHz waveguide voltage controlled oscillator (VCO) which is one of the important parts in a frequency modulated continuous wave (FMCW) radar application. For fabrication of the high power GaAs Gunn diodes, we adopted a graded gap injector which enhances the output power and conversion efficiency by effectively removing the dead-zone. We have measured RF characteristics of the fabricated GaAs Gunn diodes. The operating current, oscillation frequency, and output power of the fabricated GaAs Gunn diodes are presented as a function of the anode diameters. The operating current increases with anode diameters, whereas the oscillation frequency decreases. The higher oscillation frequency was obtained from 60 urn anode diameters of the fabricated Gunn GaAs diodes and higher power was obtained from 68μm. Also, for application of the 94GHz FMCW radar system, we have fabricated the 94 GHz waveguide VCO. From the fabricated GaAs Gunn diodes of anode diameter of 60 urn, we have obtained the improved VCO performance.
机译：在这项工作中，我们为94 GHz波导压控振荡器（VCO）设计和制造了GaAs Gunn二极管，这是调频连续波（FMCW）雷达应用中的重要组成部分之一。为了制造高功率GaAs Gunn二极管，我们采用了分级间隙注入器，该间隙注入器通过有效去除死区来提高输出功率和转换效率。我们已经测量了制造的GaAs耿氏二极管的RF特性。制成的GaAs耿氏二极管的工作电流，振荡频率和输出功率随阳极直径的变化而变化。工作电流随阳极直径的增加而增加，而振荡频率降低。从制成的Gunn GaAs二极管的60 n阳极直径可获得较高的振荡频率，而从68μm可获得较高的功率。另外，对于94GHz FMCW雷达系统的应用，我们制造了94GHz波导VCO。通过制造阳极直径为60 um的GaAs Gunn二极管，我们获得了改进的VCO性能。

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  • 来源
    《Japanese journal of applied physics》 |2010年第11期|p.111202.1-111202.4|共4页
  • 作者

    Seok-Gyu Choi; Min Han; Yong-Hyun Baek; Dong-Sik Ko; Tae-Jong Baek; Sang-Jin Lee; Jin-Ho Kim; Seong-Dae Lee; Mi-Ra Kim; Yeon-Sik Chae; Adaikalam Kathalingam; Jin-Koo Rhee;

  • 作者单位

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

    Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;

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