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首页> 外文期刊>Japanese journal of applied physics >Advanced Micro-Polycrystalline Silicon Films Formed by Blue-Multi-Laser-Diode Annealing
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Advanced Micro-Polycrystalline Silicon Films Formed by Blue-Multi-Laser-Diode Annealing

机译：蓝多激光二极管退火形成的高级微多晶硅膜

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摘要

Semiconductor blue-multi-laser-diode annealing (BLDA) for amorphous Si film was performed to obtain a film containing uniform polycrystalline silicon (poly-Si) grains as a low temperature poly-Si (LTPS) process used for thin-film transistor (TFT). By adopting continuous wave (CW) mode at the 445 nm wavelength of the BLDA system, the light beam is efficiently absorbed into the thin amorphous silicon film of 50 nm thickness and can be crystallized stably. By adjusting simply the laser power below 6 W with controlled beam shape, the isotropic Si grains from uniform micro-grains to arbitral grain size of polycrystalline phase can be obtained with reproducible by fixing the scan speed at 500 mm/s. As a result of analysis using electron microscopy and atomic force microscopy (AFM), uniform distributed micro-poly-Si grains of smooth surface were observed at a power condition below 5W and the preferred crystal orientation of (111) face was confirmed. As arbitral grain size can be obtained stably and reproducibly merely by controlling the laser power, BLDA is promising as a next-generation LTPS process for AM OLED panel including a system on glass (SoG).
机译：进行用于非晶硅膜的半导体蓝多激光二极管退火（BLDA），以获得包含均匀多晶硅（poly-Si）晶粒的膜，作为用于薄膜晶体管的低温多晶硅（LTPS）工艺（ TFT）。通过在BLDA系统的445 nm波长处采用连续波（CW）模式，光束可以有效地吸收到50 nm厚的非晶硅薄膜中，并且可以稳定地结晶。通过将激光功率简单地控制在6 W以下，并通过控制光束形状，可以通过将扫描速度固定在500 mm / s来重现从均匀的微晶粒到多晶相的任意晶粒尺寸的各向同性Si晶粒。作为使用电子显微镜和原子力显微镜（AFM）的分析的结果，在低于5W的功率条件下观察到光滑表面的均匀分布的微多晶硅晶粒，并且确认了（111）面的优选晶体取向。由于仅通过控制激光功率就可以稳定且可重复地获得任意的晶粒尺寸，因此BLDA有望成为包括玻璃系统（SoG）的AM OLED面板的下一代LTPS工艺。

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  • 来源
    《Japanese journal of applied physics》 |2010年第3issue2期|p.03CA10.1-03CA10.3|共3页
  • 作者

    Takashi Noguchi; rnYi Chen; rnTomoyuki Miyahira; rnJean de Dieu Mugiraneza; Yoshiaki Ogino; rnYasuhiro Iida; rnEiji Sahota; rnMotoyasu Terao;

  • 作者单位

    Faculty of Engineering, University of the Ryukyus, Senbaru, Nishihara, Okinawa 903-0213, Japan;

    rnFaculty of Engineering, University of the Ryukyus, Senbaru, Nishihara, Okinawa 903-0213, Japan;

    rnFaculty of Engineering, University of the Ryukyus, Senbaru, Nishihara, Okinawa 903-0213, Japan;

    rnFaculty of Engineering, University of the Ryukyus, Senbaru, Nishihara, Okinawa 903-0213, Japan;

    Hitachi Computer Peripherals Co., Ltd., Nakai, Kanagawa 259-0180, Japan;

    rnHitachi Computer Peripherals Co., Ltd., Nakai, Kanagawa 259-0180, Japan;

    rnHitachi Computer Peripherals Co., Ltd., Nakai, Kanagawa 259-0180, Japan;

    rnHitachi Computer Peripherals Co., Ltd., Nakai, Kanagawa 259-0180, Japan;

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