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首页> 外文期刊>Japanese journal of applied physics >Characteristic Improvements of ZnO-Based Metal-Semiconductor-Metal Photodetector on Flexible Substrate with ZnO Cap Layer
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Characteristic Improvements of ZnO-Based Metal-Semiconductor-Metal Photodetector on Flexible Substrate with ZnO Cap Layer

机译：带有ZnO盖层的柔性基板上基于ZnO的金属-半导体-金属光电探测器的特性改进

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摘要

In this work, ZnO-based metal-semiconductor-metal photodetectors with and without a ZnO cap layer were fabricated on flexible substrates of poly(ethylene terephthalate) (PET) for comparative analysis. The ZnO films were prepared by a low-temperature sputtering process. The photodetector with a ZnO cap layer (stack structure: ZnO/Ag/ZnO/PET) shows a much higher UV-to-visible rejection ratio of 1.56 × 10~3 than that without. This can be attributed to the photocurrents that are not only significantly increased in the UV region but also slightly suppressed in the visible region for such a novel structure. With an incident wavelength of 370 nm and an applied bias of 3 V, the responsivities of both photodetectors with and without a ZnO cap layer are 3.80 × 10~(-2) and 2.36 × 10~(-3) A/W, which correspond to quantum efficiencies of 1.13 and 0.07%, respectively. The Schottky barrier height at the Ag/ZnO interface is also determined to be 0.782 eV.
机译：在这项工作中，具有和不具有ZnO覆盖层的ZnO基金属-半导体-金属光电探测器被制造在聚对苯二甲酸乙二醇酯（PET）的柔性基板上以进行比较分析。通过低温溅射工艺制备ZnO膜。带有ZnO盖层的光电探测器（堆叠结构：ZnO / Ag / ZnO / PET）显示出的紫外可见阻光比要高得多，为1.56×10〜3。对于这种新颖的结构，这可以归因于不仅在UV区域中显着增加的光电流，而且在可见光区域中也被略微抑制的光电流。在370nm的入射波长和3V的施加偏压下，有和没有ZnO盖层的光电探测器的响应度均为3.80×10〜（-2）和2.36×10〜（-3）A / W，分别对应于1.13和0.07％的量子效率。 Ag / ZnO界面的肖特基势垒高度也确定为0.782 eV。

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  • 来源
    《Japanese journal of applied physics》 |2010年第5issue1期|P.052201.1-052201.3|共3页
  • 作者

    Liang-Wen Ji; Cheng-Zhi Wu; Chin-Ming Lin; Teen-Hang Meen; Kin-Tak Lam; Shi-Ming Peng; Sheng-Joue Young; Chien-Hung Liu;

  • 作者单位

    Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan;

    rnInstitute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan;

    rnDepartment of Applied Science, National Taitung University, Taitung 950, Taiwan;

    rnInstitute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan;

    rnInstitute of Applied Information, Leader University, Tainan 701, Taiwan;

    rnInstitute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan;

    rnInstitute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan;

    rnInstitute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan;

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