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首页> 外文期刊>Japanese journal of applied physics >Effects of Energetic Ion Bombardment on Structural and Electrical Properties of Al-Doped ZnO Films Deposited by RF-Superimposed DC Magnetron Sputtering
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Effects of Energetic Ion Bombardment on Structural and Electrical Properties of Al-Doped ZnO Films Deposited by RF-Superimposed DC Magnetron Sputtering

机译：高能离子轰击对射频叠加直流磁控溅射沉积铝掺杂ZnO薄膜结构和电性能的影响

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摘要

The bombardment of various types of energetic ions during rf-superimposed dc magnetron sputter deposition was investigated in detail and their effects on the structural and electrical properties of Al-doped ZnO (AZO) films were analyzed. Aside from the expected energetic negative oxygen ions (i.e., O~- and O_2~-), various other negative ions (i.e., AIO~-, AIO_2~-, AIO_3~-, ZnO~-, and ZnO_2~-) with a high energy were clearly observed. Such negative ions were found to be generated on the target surface and accelerated towards the substrate by the full cathode voltage. Furthermore, we found that the energy of these negative ions decreased with decreasing plasma impedance by superimposing rf power on dc sputtering. The resistivity of the AZO films deposited using the rf-superimposed dc sputtering was much lower than that of the films deposited using conventional dc sputtering. Such a decrease in resistivity should be attributed to reducing the damage of AZO films by suppressing the bombardment energies of various types of energetic negative ions impinging on a growing film surface.
机译：详细研究了射频叠加直流磁控溅射沉积过程中各种类型的高能离子的轰击，并分析了它们对掺铝ZnO（AZO）膜的结构和电性能的影响。除预期的高能负氧离子（即O〜-和O_2〜-）外，其他各种负离子（即AIO〜-，AIO_2〜-，AIO_3〜-，ZnO〜-和ZnO_2〜-）也带有清楚地观察到高能量。发现这种负离子在目标表面上生成，并通过全阴极电压向基板加速。此外，我们发现通过将射频功率叠加在直流溅射上，这些负离子的能量随着等离子体阻抗的降低而降低。使用RF叠加dc溅射沉积的AZO膜的电阻率比使用常规dc溅射沉积的膜的电阻率低得多。电阻率的这种降低应归因于通过抑制撞击在生长的薄膜表面上的各种类型的高能负离子的轰击能量来减少AZO薄膜的损坏。

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  • 来源
    《Japanese journal of applied physics》 |2010年第7issue1期|P.071103.1-071103.5|共5页
  • 作者

    Norihiro Ito; Nobuto Oka; Yasusi Sato; Yuzo Shigesato;

  • 作者单位

    Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara 229-8558, Japan Microfabrication Process Development Center, Panasonic Electric Works, Co., Ltd., 1048 Kadoma, Kadoma, Osaka 571-8686, Japan;

    rnGraduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara 229-8558, Japan;

    rnGraduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara 229-8558, Japan;

    rnGraduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara 229-8558, Japan;

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