Novel Damascene Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy

Yoshiaki Kikuchi; Yasushi Tateshita; Yuki Miyanami; Hitoshi Wakabayashi; Yukio Tagawa; Naoki Nagashima

首页> 外文期刊>Japanese journal of applied physics >Novel Damascene Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy

【24h】

Novel Damascene Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy

机译：原位砷和硼掺杂外延制备的新型金属镶嵌栅极金属氧化物半导体场效应晶体管

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A new concept planar metal-oxide-semiconductor field-effect transistor (MOSFET) which was fabricated by in situ doped selective Si epitaxy, has been proposed. Owing to the ultra-shallow junction, the short-channel effects were improved, and the drive current was increased by the gate overlapped structure as well. The characteristics of this new concept MOSFET were improved compared with those of a conventional MOSFET because of improvements in short-channel effects and parasitic resistances.

机译：提出了一种新概念的平面金属氧化物半导体场效应晶体管（MOSFET），它是由原位掺杂的选择性硅外延生长而成的。由于采用了超浅结，栅极重叠结构也改善了短沟道效应，并增加了驱动电流。由于改进了短沟道效应和寄生电阻，因此与常规MOSFET相比，该新概念MOSFET的特性得到了改善。

著录项

来源
《Japanese journal of applied physics》 |2010年第7issue1期|P.071301.1-071301.5|共5页
作者
Yoshiaki Kikuchi; Yasushi Tateshita; Yuki Miyanami; Hitoshi Wakabayashi; Yukio Tagawa; Naoki Nagashima;
展开▼
作者单位

Device Technology Department, Semiconductor Technology Development Division,Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation,4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;

rnDevice Technology Department, Semiconductor Technology Development Division,Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation,4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;

rnDevice Technology Department, Semiconductor Technology Development Division,Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation,4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;

rnDevice Technology Department, Semiconductor Technology Development Division,Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation,4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;

rnDevice Technology Department, Semiconductor Technology Development Division,Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation,4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;

rnDevice Technology Department, Semiconductor Technology Development Division,Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation,4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Planar Metal-Oxide-Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In situ Boron-Doped Selective Silicon Epitaxy [J] . Yoshiaki Kikuchi, Yasushi Tateshita, Yuki Miyanami, Japanese journal of applied physics . 2010,第3issue1期

机译：通过原位掺杂硼的选择性硅外延制造的具有增加的源极和漏极扩展的平面金属氧化物半导体场效应晶体管
2. Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy [J] . Hosoi Takuji, Suzuki Yuichiro, Shimura Takayoshi, Applied Physics Letters . 2014,第17期

机译：侧向液相外延制备带Ge条纹的绝缘体上Ge型金属氧化物半导体场效应晶体管的迁移特性
3. Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy [J] . Takuji Hosoi, Yuichiro Suzuki, Takayoshi Shimura, Applied Physics Letters . 2014,第17期

机译：侧向液相外延制备带Ge条纹的绝缘体上Ge型金属氧化物半导体场效应晶体管的迁移特性
4. Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-oxide-semiconductor Field-effect Transistors Fabricated on 4H-SiC (0001) [C] . Takuma Suzuki, Junji Senzaki, Tetsuo Hatakeyama, Silicon Carbide and Related Materials 2007 . 2009

机译：栅极湿法再氧化对在4H-SiC上制造的金属氧化物半导体场效应晶体管的可靠性和沟道迁移率的影响（0001）
5. Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy. [D] . Liao, Chi-Chih. 2011

机译：通过分子束外延生长的基于锑化物的场效应晶体管和异质结双极晶体管。
6. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques [O] . Hsin-Ying Lee, Hung-Lin Huang, Chun-Yen Tseng 2014

机译：使用自对准和激光干涉光刻技术制造的多栅极ZnO金属氧化物半导体场效应晶体管的性能增强
7. Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-oxide-semiconductor Field-effect Transistors Fabricated on 4H-SiC (000 1) [O] . Takuma Suzuki, Junji Senzaki, Tetsuo Hatakeyama 2016

机译：栅极湿式再氧化对4H-siC（000 1）上制备的金属氧化物半导体场效应晶体管可靠性和沟道迁移率的影响
8. Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated Using Self-Aligned Silicide Technology [R] . Tsaur, B. Y., Anderson, C. H. 1985

机译：采用自对准硅化物技术制作的金属氧化物半导体场效应晶体管

Novel Damascene Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅