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首页> 外文期刊>Japanese journal of applied physics >Improvement in Ferroelectric Properties of Chemically Synthesized Lead-Free Piezoelectric (K,Na)(Nb,Ta)O_3 Thin Films by Mn Doping
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Improvement in Ferroelectric Properties of Chemically Synthesized Lead-Free Piezoelectric (K,Na)(Nb,Ta)O_3 Thin Films by Mn Doping

机译：锰掺杂改善化学合成无铅压电（K，Na）（Nb，Ta）O_3薄膜的铁电性能

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摘要

Lead-free piezoelectric (K,Na)(Nb,Ta)O_3 thin films were prepared by chemical solution deposition. Perovskite single-phase (K_(0.5)-Na_(0.5))(Nb_(0.8)Ta_(0.2))O_3 and Mn-doped (K_(0.5)Na_(0.5))(Nb_(0.8)Ta_0.2)O_3 thin films were successfully fabricated at 600℃ on Pt/TiO_x/SiO_2/Si substrates by controlling the excess amounts of K and Na, and Mn by doping. The (K_(0.5)Na_(0.5))(Nb_(0.8)Ta_(0.2))O_3 thin films showed poor ferroelectric polarizations due to the insufficient insulating resistance at room temperature. The leakage current density of the (K_(0.5)Na_(0.5))(Nb_(0.8)Ta_(0.2))O_3 films, especially in the high-applied-field region, was markedly reduced by doping with a small amount of Mn. Also, the ferroelectric properties of the (K_(0.5)Na_(0.5))(Nb_(0.8)Ta_(0.2))O_3 thin films were markedly improved by Mn doping. 0.5 and 1.0mol% Mn-doped (K_(0.5)Na_(0.5))(Nb_(0.8)Ta_(0.2))O_3 thin films exhibited well-shaped ferroelectric polarization-electric field (P-E) hysteresis loops at room temperature. The remanent polarization (P_r) and coercive field (E_c) values of the 0.5 and 1.0mol% Mn-doped (K_(0.5)Na_(0.5))(Nb_(0.8)Ta_(0.2))O_3 thin films at 1 kHz were approximately 14 and 21 μC/cm~2, and 111 and 86 kV/cm, respectively. Furthermore, these films showed a typical field-induced butterfly loop, and the estimated effective d_(33) values were 58 pm/V for the 0.5 mol % Mn-doped (K_(0.5)Na_(0.5))(Nb_(0.8)Ta_(0.2))O_3 thin films and 41 pm/V for the 1.0 mol % Mn-doped (K_(0.5)Na_(0.5))(Nb_(0.8)Ta_(0.2))O_3 thin films.
机译：通过化学溶液沉积法制备了无铅压电（K，Na）（Nb，Ta）O_3薄膜。钙钛矿单相（K_（0.5）-Na_（0.5））（Nb_（0.8）Ta_（0.2））O_3和Mn掺杂（K_（0.5）Na_（0.5））（Nb_（0.8）Ta_0.2）O_3通过掺杂控制K，Na和Mn的过量，在600℃的Pt / TiO_x / SiO_2 / Si衬底上成功制备了薄膜。 （K_（0.5）Na_（0.5））（Nb_（0.8）Ta_（0.2））O_3薄膜由于室温下的绝缘电阻不足而显示出差的铁电极化。 （K_（0.5）Na_（0.5））（Nb_（0.8）Ta_（0.2））O_3薄膜的漏电流密度，特别是在高电场区域，通过掺杂少量Mn显着降低。 。此外，通过掺杂Mn，（K_（0.5）Na_（0.5））（Nb_（0.8）Ta_（0.2））O_3薄膜的铁电性能得到显着改善。 0.5和1.0mol％的Mn掺杂（K_（0.5）Na_（0.5））（Nb_（0.8）Ta_（0.2））O_3薄膜在室温下表现出良好的铁电极化电场（P-E）磁滞回线。 0.5和1.0mol％Mn掺杂（K_（0.5）Na_（0.5））（Nb_（0.8）Ta_（0.2））O_3薄膜在1 kHz时的剩余极化（P_r）和矫顽场（E_c）值分别为分别约为14和21μC/ cm〜2，以及111和86 kV / cm。此外，这些膜表现出典型的场致蝴蝶环，对于0.5摩尔％的Mn掺杂（K_（0.5）Na_（0.5））（Nb_（0.8），估计的有效d_（33）值为58 pm / V。 Ta_（0.2））O_3薄膜和1.0 pm％Mn掺杂（K_（0.5）Na_（0.5））（Nb_（0.8）Ta_（0.2））O_3薄膜的41 pm / V。

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  • 来源
    《Japanese journal of applied physics》 |2010年第9issue2期|p.09MA04.1-09MA04.6|共6页
  • 作者

    Naoya Kondo; Wataru Sakamoto; Bong-Yeon Lee; Takashi lijima; Jun Kumagai; Makoto Moriya; Toshinobu Yogo;

  • 作者单位

    Division of Nanomaterials Science, EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

    rnDivision of Nanomaterials Science, EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

    rnNational Institute Advanced Industrial Science and Technology (AIST), Tsukuba Center 5, Tsukuba, Ibaraki 305-8565, Japan;

    rnNational Institute Advanced Industrial Science and Technology (AIST), Tsukuba Center 5, Tsukuba, Ibaraki 305-8565, Japan;

    rnDepartment of Applied Chemistry, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

    rnDivision of Nanomaterials Science, EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

    rnDivision of Nanomaterials Science, EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

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