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首页> 外文期刊>Japanese journal of applied physics >Effect of Grain Size on Mechanical Properties of Full-Dense Pb(Zr,Ti)O_3 Ceramics
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Effect of Grain Size on Mechanical Properties of Full-Dense Pb(Zr,Ti)O_3 Ceramics

机译:晶粒尺寸对高密度Pb(Zr,Ti)O_3陶瓷力学性能的影响

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摘要

The grain size dependence of mechanical properties was investigated in full-dense Pb(Zr,Ti)O_3 (PZT) ceramics using a microindentation fracture method. Full-dense PZT ceramics with an average grain size ranging from 0.09 to 2.3 μm were successfully prepared by a novel compaction method based on aerosol deposition (AD). Vickers hardness (H_v) increased with decreasing grain size and the Hall-Petch relationship (H_v = H_(vo) + kd~(-1/2)) was confirmed over almost the entire grain size range investigated, which indicates that grain size could be the determining factor of hardness in full-dense PZT ceramics. On the other hand, fracture toughness (K_c) decreased with decreasing grain size below the critical grain size of 1.0 μm. The critical grain size was consistent with that below which the volume fraction of the tetragonal phase (V_Tet) decreased with decreasing grain size, which indicates that ferroelastic 90° domain switching is a viable toughening mechanism in PZT ceramics. In this study, we have demonstrated that, with suitable microstructural control, the PZT ceramics with ultra-high strength for contact situations can be realized without any sacrifice in piezoelectric properties.
机译:利用微压痕断裂方法研究了全密度Pb(Zr,Ti)O_3(PZT)陶瓷的力学性能对晶粒尺寸的依赖性。通过基于气溶胶沉积(AD)的新型压紧方法成功地制备了平均晶粒度范围为0.09至2.3μm的全密度PZT陶瓷。维氏硬度(H_v)随着晶粒尺寸的减小而增加,并且在研究的几乎整个晶粒尺寸范围内均证实了Hall-Petch关系(H_v = H_(vo)+ kd〜(-1/2)),这表明晶粒尺寸可以是高密度PZT陶瓷硬度的决定因素。另一方面,在小于1.0μm的临界粒径的情况下,随着粒径的减小,断裂韧性(K_c)降低。临界晶粒尺寸与该尺寸一致,低于该尺寸时,随着晶粒尺寸的减小,四方相的体积分数(V_Tet)减小,这表明铁弹性90°畴转换是PZT陶瓷中可行的增韧机制。在这项研究中,我们证明了通过适当的微结构控制,可以实现在接触情况下具有超高强度的PZT陶瓷,而不会牺牲压电性能。

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  • 来源
    《Japanese journal of applied physics》 |2010年第9issue2期|p.09MD13.1-09MD13.6|共6页
  • 作者单位

    FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, Japan;

    rnDepartment of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan;

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