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首页> 外文期刊>Japanese journal of applied physics >Annealing Effects on Sensitivity of Atomic-Layer-Deposited SrTiO_3-Based Oxygen Sensors
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Annealing Effects on Sensitivity of Atomic-Layer-Deposited SrTiO_3-Based Oxygen Sensors

机译：退火对基于原子层的SrTiO_3基氧传感器灵敏度的影响

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摘要

Semiconductive dielectric SrTiO_3-based thin films are promising candidates for in situ monitoring of trace levels of oxygen in semiconductor or organic light-emitting diode (LED) display manufacturing processes. SrTiO_3-based thin films, which are deposited by atomic-layer deposition (ALD), exhibit high sensitivity to oxygen at room temperature; however, the sensitivity can be affected by SrO-based surface segregation. In this study, we will show that annealing temperature and time are the key parameters for decreasing the coverage of oxygen-insensitive SrO-based surface segregation.
机译：基于SrTiO_3的半导电介质薄膜有望用于半导体或有机发光二极管（LED）显示器制造过程中氧的痕量水平的原位监测。通过原子层沉积（ALD）沉积的基于SrTiO_3的薄膜在室温下对氧气表现出很高的敏感性。但是，灵敏度会受到基于SrO的表面偏析的影响。在这项研究中，我们将显示退火温度和时间是减少对氧敏感的SrO基表面偏析覆盖率的关键参数。

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  • 来源
    《Japanese journal of applied physics》 |2010年第9issue2期|p.09MA015.1-09MA015.8|共8页
  • 作者

    Toru Hara; Takashi Ishiguro; Kazuo Shinozaki;

  • 作者单位

    Corporate Technology Planning Department, Research and Development Laboratory, Taiyo Yuden Co., Ltd.,8-1 Sakaecho, Takasaki, Gunma 370-8522, Japan;

    rnCorporate Technology Planning Department, Research and Development Laboratory, Taiyo Yuden Co., Ltd.,8-1 Sakaecho, Takasaki, Gunma 370-8522, Japan;

    rnDepartment of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology,2-12-1 O-okayama, Meguro, Tokyo 152-8550, Japan;

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