Optical Sensing Circuit Using Low-Temperature Polycrystalline Silicon p-Type Thin-Film Transistors and p-Intrinsic-Metal Diode for Active Matrix Displays with Optical Input Functions

Han-Sin Lim; Oh-Kyong Kwon

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Optical Sensing Circuit Using Low-Temperature Polycrystalline Silicon p-Type Thin-Film Transistors and p-Intrinsic-Metal Diode for Active Matrix Displays with Optical Input Functions

机译：使用低温多晶硅p型薄膜晶体管和p本征金属二极管的光学传感电路，用于具有光学输入功能的有源矩阵显示器

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An optical sensing circuit composed of low-temperature polycrystalline silicon (LTPS) p-type thin-film transistors (TFTs) and a p-intrinsic-metal (p-i-m) diode is proposed for image scanning and touch sensing functions. Because it is a very difficult challenge to integrate both display pixels and optical sensing circuits into the restricted pixel area, the number of additional devices and control signal lines must be minimized. Therefore, two p-type TFTs, one p-i-m diode, one capacitor, and one signal line are added to display pixel for the proposed optical sensing circuit. Active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diode (AMOLED) pixels with the proposed optical sensing circuit have image scanning and touch sensing functions, respectively. Through the measurement of the proposed circuit under the condition of incident light varying from 0 to 10,000 Ix, we verified that the dynamic and output ranges of the proposed circuit are 30 dB and 1.5 V, respectively.

机译：提出了一种由低温多晶硅（LTPS）p型薄膜晶体管（TFT）和p本征金属（p-i-m）二极管组成的光学传感电路，用于图像扫描和触摸传感功能。由于将显示像素和光学传感电路都集成到受限的像素区域是一个非常困难的挑战，因此必须最小化附加设备和控制信号线的数量。因此，针对所提出的光学感测电路，将两个p型TFT，一个p-i-m二极管，一个电容器和一条信号线添加到显示像素。具有所提出的光学传感电路的有源矩阵液晶显示器（AMLCD）和有源矩阵有机发光二极管（AMOLED）像素分别具有图像扫描和触摸传感功能。通过在入射光从0到10,000 Ix的变化条件下对拟议电路进行测量，我们验证了拟议电路的动态范围和输出范围分别为30 dB和1.5V。

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来源
《Japanese journal of applied physics》 |2009年第3issue3期|57-63|共7页
作者
Han-Sin Lim; Oh-Kyong Kwon;
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Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

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2. A Simple Pixel Structure Using Polycrystalline-Silicon Thin-Film Transistors for High-Resolution Active-Matrix Organic Light-Emitting Diode Displays [J] . In H.-J. Electron Device Letters, IEEE . 2012,第7期

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3. Driving Method Compensating for the Hysteresis of Polycrystalline Silicon Thin-Film Transistors for Active-Matrix Organic Light-Emitting Diode Displays [J] . Myoung-Hoon Jung, Ohyun Kim, Byeong-Koo Kim, Japanese journal of applied physics . 2009,第5issue1期

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4. Design of an analog output buffer for Active Matrix displays using low-temperature polycrystalline silicon thin-film transistors [C] . Pappas Ilias, Siskos Stylianos, Hatzopoulos Alkis A. Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference . 2012

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5. Active matrix organic light-emitting displays: Novel amorphous silicon thin-film transistors and pixel electrode circuits [D] . Lee, Hojin 2008

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6. Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering [O] . Li-Chen Yen, Ming-Tsyr Tang, Fang-Yu Chang, 2014

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7. Metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology for active-matrix organic light-emitting diode displays with reduced susceptibility to cross-talk [O] . Meng, Zhiguo, Kwok, Hoi-Sing, Wong, Man 2002

机译：用于有源矩阵有机发光二极管显示器的金属诱导的单晶结晶多晶硅薄膜晶体管技术，降低了串扰

Optical Sensing Circuit Using Low-Temperature Polycrystalline Silicon p-Type Thin-Film Transistors and p-Intrinsic-Metal Diode for Active Matrix Displays with Optical Input Functions

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