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Optimal Integration Process for Elimination of Abnormal Striation on Wafer Dual Damascene Processes

机译:消除晶圆双镶嵌工艺异常条纹的最佳集成工艺

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摘要

This paper is focused on optimal lithography processes using copper back-end-of-line (BEOL) semiconductor wafer integration technology and a solution to the problem of defect reduction on a semiconductor wafer. The pattern collapse observed in this process and numerous defects were prevented by optimizing the process module tuning. A novel semiconductor process on various pattern designs and deep pattern aspect ratio effects of a submicron semiconductor structure were included in this study. In addition to the experimental wafer manufacturing process, the electrical device data and defect reduction checking were also included.
机译:本文致力于采用铜后端(BEOL)半导体晶片集成技术的最佳光刻工艺,以及解决半导体晶片缺陷减少问题的解决方案。通过优化过程模块调整,可以在此过程中观察到图案塌陷,并避免了许多缺陷。这项研究包括一种新颖的半导体工艺,可用于各种图案设计以及亚微米半导体结构的深图案长宽比效应。除了实验性晶圆制造工艺外,还包括电子设备数据和缺陷减少检查。

著录项

  • 来源
    《Japanese journal of applied physics》 |2009年第4issue1期|295-300|共6页
  • 作者

    Chun-Jen Weng;

  • 作者单位

    Department of Technology Management, Leader University, Tainan 709, Taiwan, R.O.C.;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
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