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首页> 外文期刊>Japanese journal of applied physics >Nonpolar Resistance Switching in Anodic Oxide Alumina Films
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Nonpolar Resistance Switching in Anodic Oxide Alumina Films

机译：阳极氧化铝薄膜中的非极性电阻转换

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摘要

At an applied voltage, anodic oxide alumina (AOA) films exhibit reproducible resistance switching between two states: a high-resistance state with insulating properties and a metallic low-resistance state. This resistance switching does not depend on the polarity of the applied voltage. A reduction in photoluminescence signal intensity of points switched to the low-resistance state was observed. The filamentary electronic model was employed to explain the resistance switching in the AOA films, which assumed that rupture and recovery of filaments are caused by the migration of electrons from and to filaments, respectively.
机译：在施加电压时，阳极氧化铝（AOA）膜在两个状态之间显示可再现的电阻切换：具有绝缘特性的高电阻状态和金属低电阻状态。该电阻切换不取决于所施加电压的极性。观察到切换到低电阻状态的点的光致发光信号强度降低。采用丝状电子模型来解释AOA膜中的电阻转换，该模型假定丝状体的破裂和恢复分别是由电子从丝状体迁移到丝状体引起的。

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  • 来源
    《Japanese journal of applied physics》 |2009年第7issue1期|070207.1-070207.3|共3页
  • 作者

    Vadim Sh. Yalishev; Shavkat U. Yuldashev; Jin-Soo Kim; Bae Ho Park;

  • 作者单位

    Division of Quantum Phases and Devices, School of Physics, Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701, Korea;

    Quantum-Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-gu, Seoul 100-715, Korea;

    Division of Quantum Phases and Devices, School of Physics, Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701, Korea;

    Division of Quantum Phases and Devices, School of Physics, Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701, Korea;

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