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首页> 外文期刊>Japanese journal of applied physics >Effect of Composition Disorders on Band Structure and Optical Gain Spectra of GalnNAs/GaAs Quantum Wells
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Effect of Composition Disorders on Band Structure and Optical Gain Spectra of GalnNAs/GaAs Quantum Wells

机译：组分无序对GalnNAs / GaAs量子阱的能带结构和光学增益谱的影响

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摘要

The effects of non-uniform compositions (the composition disorders) of indium and nitrogen, in a Ga_(0.59)In_(0.41)N_(0.038)As_(0.962)/GaAs single-quantum well (QW) along the growth direction, on the QW's band structure and further on its optical gain spectrum have been studied theoretically. The 10-band k·p model and the many-body optical gain model have been employed, respectively, to calculate the band structure and the optical gain of the QW. The subband energy dispersions, the optical gains of the transverse electric (TE) and transverse magnetic (TM) modes, and the radiative current densities have been investigated. The composition disorders lead to blueshift in carrier's transition energy, which is mainly due to indium composition disorder while nitrogen composition disorder only plays minor role. The TM mode optical gain is significantly enhanced and the threshold current density is increased in the composition disordered QW structure. These results may provide important supports in the design and fabrications of GalnNAs/GaAs QW based optoelectronic devices.
机译：Ga_（0.59）In_（0.41）N_（0.038）As_（0.962）/ GaAs单量子阱（QW）中沿生长方向的铟和氮的不均匀组成（组成失调）对从理论上研究了QW的能带结构及其光增益谱。分别采用10波段k·p模型和多体光学增益模型来计算QW的波段结构和光学增益。研究了子带能量色散，横向电（TE）模式和横向磁（TM）模式的光学增益以及辐射电流密度。组成异常导致载流子跃迁能发生蓝移，这主要归因于铟组成异常，而氮组成异常仅起较小作用。在无序组成的QW结构中，TM模式的光学增益显着提高，并且阈值电流密度增加。这些结果可能为基于GalnNAs / GaAs QW的光电器件的设计和制造提供重要的支持。

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  • 来源
    《Japanese journal of applied physics》 |2009年第8issue1期|081101.1-081101.7|共7页
  • 作者

    Vivek Dixit; Hongfei Liu; Ning Xiang;

  • 作者单位

    Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576;

    Institute of Materials Research and Engineering, A~*STAR (Agency of Science, Technology and Research), 3 Research Link, Singapore 117602;

    Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576;

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