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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Pentacene Field-Effect Transistor with Ferroelectric Gate Insulator as Maxwell-Wagner Effect Element
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Pentacene Field-Effect Transistor with Ferroelectric Gate Insulator as Maxwell-Wagner Effect Element

机译：以铁电栅极绝缘体为麦克斯韦-瓦格纳效应元件的并五苯场效应晶体管

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摘要

The behavior of charges in pentacene field-effect transistors (FETs) with a ferroelectric gate insulator [copolymer of vinylidene fluoride and tetrafluoroethylene, i.e., P(VDF-TeFE)] was investigated. Two peaks appeared in the I_(gs)-V_(gs) characteristics at V_(ds) = 0 V. Analyzing the behavior of the charges in the pentacene FETs revealed that the first peak appearing at the lower V_(gs) is ascribed to the exhaustion of accumulated holes at the pentacene/P(VDF-TeFE) interface in the direction from the interface to the source and drain electrodes in response to the electric field formed in pentacene. On the other hand, the second peak appearing at the higher V_(gs) is ascribed to the turn-over of the spontaneous polarization of the P(VDF-TeFE). However, a threshold voltage shift due to the spontaneous polarization that was small compared with the expected shift suggests that the turn-over of the spontaneous polarization is partial. A mechanism of the turn-over of spontaneous polarization is analyzed in terms of the Maxwell-Wagner effect.
机译：研究了具有铁电栅极绝缘体[偏二氟乙烯和四氟乙烯的共聚物，即P（VDF-TeFE）]的并五苯场效应晶体管（FET）中电荷的行为。在V_（ds）= 0 V时，I_（gs）-V_（gs）特性中出现了两个峰值。分析并五苯FET中电荷的行为表明，出现在较低V_（gs）处的第一个峰值归因于并五苯/ P（VD​​F-TeFE）界面上积聚的空穴的响应于并五苯中形成的电场而从界面到源极和漏极的方向耗尽。另一方面，出现在较高的V_（gs）处的第二个峰归因于P（VDF-TeFE）的自发极化的翻转。但是，由于自发极化引起的阈值电压偏移与预期的偏移相比较小，这表明自发极化的翻转是部分的。根据麦克斯韦-瓦格纳效应分析了自发极化翻转的机制。

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