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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Electrotransport Properties of p-ZnSnAs_2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates
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Electrotransport Properties of p-ZnSnAs_2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates

机译：半绝缘（001）InP衬底上分子束外延生长的p-ZnSnAs_2薄膜的电传输性质

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摘要

ZnSnAs_2 thin films were prepared by molecular beam epitaxy (MBE) on semi-insulating (001) InP substrates using the same growth conditions as previously reported. High-resolution X-ray diffractometry (HRXRD) and Raman spectroscopy studies suggest the presence of both the chalcopyrite and sphalerite phases. The transport properties were measured from 5 K up to room temperature. We observed a pronounced peak in the Hall coefficient temperature dependence curve at ～130K, similar to those observed only from chalcopyrite-phase bulk ZnSnAs_2 in earlier studies. A hole concentration of p = 5.98 × 10~(18)cm~(-3), hole mobility of μ = 23.61 cm~2/(V·s) and resistivity of p = 4.43 ×10~(-2)Ω·cm were obtained at room temperature.
机译：ZnSnAs_2薄膜通过分子束外延（MBE）在半绝缘（001）InP衬底上使用与先前报道的相同的生长条件制备。高分辨率X射线衍射（HRXRD）和拉曼光谱研究表明，黄铜矿和闪锌矿相均存在。测量的传输性能是从5 K到室温。我们在〜130K处的霍尔系数温度依赖性曲线中观察到一个明显的峰，类似于早期研究中仅从黄铜矿相块状ZnSnAs_2中观察到的峰。空穴浓度p = 5.98×10〜（18）cm〜（-3），空穴迁移率μ= 23.61 cm〜2 /（V·s），电阻率p = 4.43×10〜（-2）Ω·在室温下获得10cm。

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