Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation

Katsuhiro Kutsuki; Gaku Okamoto; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe

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Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation

机译：高密度等离子体氮化形成纯Ge_3N_4介电层的特性

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We have demonstrated the direct nitridation of Ge substrates to obtain pure germanium nitrides (Ge_3N_4). Physical characterization revealed that 3.5-nm-thick amorphous Ge_3N_4 layers with smooth surfaces and abrupt nitride/Ge interfaces were formed by th

机译：我们已经证明了将Ge衬底直接氮化以获得纯氮化锗（Ge_3N_4）。物理表征表明，通过溅射形成了厚度为3.5nm的非晶态Ge_3N_4层，具有光滑的表面和陡峭的氮化物/ Ge界面。

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《Japanese journal of applied physics》 |2008年第4issue2期|2415-2419|共5页
作者
Katsuhiro Kutsuki; Gaku Okamoto; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe;
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正文语种 eng
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Ge_3N_4; plasma nitridation; insulator; thermal stability; MISFET;

机译：Ge_3N_4;等离子体氮化绝缘子;热稳定性;MISFET;

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1. Electrical Characteristics of Ge-Based Metal-Insulator-Semiconductor Devices with Ge_3N_4 Dielectrics Formed by Plasma Nitridation [J] . Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Journal of nanoscience and nanotechnology . 2011,第4期

机译：等离子体氮化形成Ge_3N_4电介质的Ge基金属绝缘体-半导体器件的电学特性
2. Structural analysis and electrical properties of pure Ge_3N_4 dielectric layers formed by an atmospheric-pressure nitrogen plasma [J] . Ryoma Hayakawa, Masashi Yoshida, Kouta Ide, Journal of Applied Physics . 2011,第6期

机译：常压氮等离子体形成的纯Ge_3N_4介电层的结构分析和电性能
3. Synchrotron Radiation Photoemission Study of Ge_3N_4/Ge Structures Formed by Plasma Nitridation [J] . Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Japanese journal of applied physics . 2011,第10Issue2期

机译：等离子体氮化形成Ge_3N_4 / Ge结构的同步辐射研究
4. Thermal and Humidity Stability of Ge{sub}3N{sub}4 Thin Layers Fabricated by High-Density Plasma Nitridation [C] . Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, International Semiconductor Device Research Symposium . 2007

机译：Ge {Sub} 3N {Sub} 4的热湿度稳定性，由高密度等离子体氮化制造的4个薄层
5. Gallium nitride-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing. [D] . Bae, Choelhwyi. 2003

机译：使用远程等离子处理的栅极电介质和钝化层的氮化镓-电介质界面形成。
6. Interfacial Electrical and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition [O] . Yan-Qiang Cao, Bing Wu, Di Wu, 2017

机译：等离子体增强原子层沉积法原位形成SiO2中间层的HfO2 / Ge叠层的界面电和能带对准特性
7. Study of Retention Characteristics and Program Speed Enhancement Using Plasma Nitridation on Interpoly Dielectric [O] . Ching-Yuan Ho 2012

机译：介电介质上等离子体氮化的固位特性和程序速度提高研究
8. Millimeter-Wave Applications of Semiconductor Dielectric Waveguides with Plasma Layers (Surface or Buried) Generated from Semiconductor Lasers. [R] . Butler, J. K. 1992

机译：具有由半导体激光器产生的等离子体层（表面或掩埋）的半导体介电波导的毫米波应用。

Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation

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