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首页> 外文期刊>Japanese journal of applied physics >Two-dimensional Carrier Profiling By Kelvin-probe Force Microscopy
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Two-dimensional Carrier Profiling By Kelvin-probe Force Microscopy

机译：用开尔文-探针力显微镜对二维载体进行分析

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摘要

This paper reports the two-dimensional (2-D) carrier/dopant profiling technique by Kelvin-probe force microscopy (KFM). Before surface potential was measured, a feedback control circuit was used to improve signal response speed. The effect of surface treatment on the contrast in surface potential images was studied. Then the correlation between surface potential difference measured by KFM and surface carrier/dopant concentration obtained by spreading resistance profiling, the capacitance-voltage method, and secondary ion mass spectroscopy analysis was established. On the basis of these results, the carrier depth profiling of a p-n junction and the detection of a p-n junction array with small pitch have been successfully demonstrated.
机译：本文报道了通过开尔文探针力显微镜（KFM）进行的二维（2-D）载体/掺杂物分析技术。在测量表面电势之前，使用反馈控制电路来提高信号响应速度。研究了表面处理对表面电势图像中对比度的影响。然后建立了通过KFM测量的表面电势差与通过扩展电阻分布图，电容电压法和二次离子质谱分析获得的表面载流子/掺杂剂浓度之间的相关性。基于这些结果，已成功地证明了p-n结的载流子深度剖析和小间距p-n结阵列的检测。

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