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首页> 外文期刊>Japanese journal of applied physics >Chemical Mechanical Planarization Method for Thick Copper Films of Micro-Electro-Mechanical Systems and Integrated Circuits
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Chemical Mechanical Planarization Method for Thick Copper Films of Micro-Electro-Mechanical Systems and Integrated Circuits

机译：微机电系统和集成电路中厚铜膜的化学机械平面化方法

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摘要

Modern industries require more accurate and high power-efficient micro-electro-mechanical systems (MEMS) and integrated circuits (ICs). Because the structure of MEMS and ICs becomes complicated, chemical mechanical planarization (CMP) has been introduced to fabricate highly integrated electro-mechanical structures. This study aims to reduce dishing and erosion using a negative photoresist (PR) as a protective layer in CMP for thick copper. After bulk copper CMP, soft-landing was carried out using an acidic copper CMP slurry. Method I was the CMP of a thick copper pattern without a negative PR, and method II was a new concept for the CMP method which removed the copper and negative PR to reduce the amount of copper dishing and erosion. In comparison with method I, method II reduced the dishing and erosion by about 46 and 60%, respectively.
机译：现代工业需要更准确，更高效的微机电系统（MEMS）和集成电路（IC）。由于MEMS和IC的结构变得复杂，因此引入了化学机械平面化（CMP）来制造高度集成的机电结构。这项研究旨在通过使用负性光刻胶（PR）作为CMP中厚铜的保护层来减少凹陷和腐蚀。在批量铜CMP之后，使用酸性铜CMP浆料进行软着陆。方法I是没有负PR的厚铜图案的CMP，方法II是CMP方法的新概念，该方法去除了铜和负PR以减少铜凹陷和腐蚀量。与方法I相比，方法II分别使凹陷和腐蚀降低了约46％和60％。

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