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首页> 外文期刊>Japanese journal of applied physics >Epitaxial Growth And Ferroelectric Properties Of Pbtio_3 Nanoislands And Thin Films Grown On Single-crystalline Pt Films
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Epitaxial Growth And Ferroelectric Properties Of Pbtio_3 Nanoislands And Thin Films Grown On Single-crystalline Pt Films

机译：Pbtio_3纳米岛和单晶Pt薄膜上生长的薄膜的外延生长和铁电性能

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摘要

Single-crystalline Pt (SC-Pt) films 15-60nm thick with an atomically flat surface were coherently grown on SrTiO_3(100) substrates by rf magnetron sputtering using Ir buffer layers. In the epitaxial growth of PbTiO_3 films on SC-Pt films by metalorganic chemical vapor deposition, square nanoislands with heights of 3-30nm and widths of 30-200nm were grown by self-assembly at the initial growth stage, and subsequently, a continuous film was formed, indicating the Volmer-Weber growth mode. The minimum thickness required to form a continuous PbTiO_3 film on SC-Pt films was 50 nm, which is much smaller than the 100 nm thickness on partially relaxed Pt films. Piezoresponse force microscopy revealed that piezoelectric constants of PbTiO_3 nanoislands with heights below 10 nm were distinctly dependent on the height rather than the aspect ratio, suggesting intrinsic size effects of the piezoelectric constant. Continuous PbTiO_3 films with thicknesses down to 50 nm exhibited saturated hysteresis loops with remanent polarizations of 57-64 μC/cm~2 and coercive fields of 166-275 kV/cm.
机译：通过使用Ir缓冲层的射频磁控溅射，在SrTiO_3（100）衬底上相干生长了15-60nm厚且原子平面平坦的单晶Pt（SC-Pt）膜。在通过有机金属化学气相沉积法在SC-Pt膜上外延生长PbTiO_3膜时，在初始生长阶段通过自组装生长高度为3-30nm，宽度为30-200nm的方形纳米岛，随后形成连续膜形成，表明沃尔默-韦伯增长模式。在SC-Pt膜上形成连续PbTiO_3膜所需的最小厚度为50 nm，比在部分松弛的Pt膜上的100 nm厚度小得多。压电响应显微镜显示，高度低于10 nm的PbTiO_3纳米岛的压电常数明显取决于高度而不是纵横比，这表明压电常数具有内在的尺寸效应。厚度小于50 nm的连续PbTiO_3膜表现出饱和磁滞回线，剩余极化率为57-64μC/ cm〜2，矫顽场为166-275 kV / cm。

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