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首页> 外文期刊>Japanese journal of applied physics >Composition Dependence In Bifeo_3 Film Capacitor With Suppressed Leakage Current By Nd And Mn Cosubstitution And Their Ferroelectric Properties
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Composition Dependence In Bifeo_3 Film Capacitor With Suppressed Leakage Current By Nd And Mn Cosubstitution And Their Ferroelectric Properties

机译：Nd，Mn共取代抑制漏电流的Bifeo_3薄膜电容器的成分依赖性及其铁电性能

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摘要

(Nd,Mn)-cosubstituted BiFeO_3 (BFO) films with various Nd and Mn compositions were fabricated on a Pt/SrTiO_3(100) substrate by pulsed laser deposition. X-ray diffraction patterns and atomic force microscopy images indicated that the suppression of impurity phases and a smooth surface morphology were realized by Nd substitution in the BFO films. Furthermore, by combining with Nd substitution, a small amount of Mn substitution in BFO films is effective for reducing the leakage current density by three orders of magnitude compared with that of a BFO film capacitor. The polarization vs electric field (P-E) curves showed a strong dependence of measurement frequency in the range of 0.1 - 2 kHz, and well-saturated P-E hysteresis loops were observed at 20 kHz at room temperature. The remanent polarization and coercive field at a maximum electric field of 1.9MV/cm were approximately 70 μC/cm~2 and 0.32MV/cm, respectively.
机译：通过脉冲激光沉积在Pt / SrTiO_3（100）衬底上制备了具有各种Nd和Mn组成的（Nd，Mn）共取代的BiFeO_3（BFO）膜。 X射线衍射图和原子力显微镜图像表明，通过在BFO膜中进行Nd取代，可以抑制杂质相并实现平滑的表面形貌。此外，通过与Nd置换相结合，BFO膜中的少量Mn置换与BFO膜电容器相比有效地将泄漏电流密度降低了三个数量级。极化-电场（P-E）曲线显示在0.1-2 kHz范围内测量频率有很强的依赖性，并且在室温下在20 kHz时观察到饱和的P-E磁滞回线。最大电场为1.9MV / cm时的剩余极化和矫顽场分别约为70μC/ cm〜2和0.32MV / cm。

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