Discharge Pulse Counting for Low-Noise Single-Photon Detection at 1550 nm Using InGaAs Avalanche Photodiode Cooled to 130 K

Akio Yoshizawa; Satoru Odate; Hidemi Tsuchida

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Discharge Pulse Counting for Low-Noise Single-Photon Detection at 1550 nm Using InGaAs Avalanche Photodiode Cooled to 130 K

机译：使用冷却至130 K的InGaAs雪崩光电二极管在1550 nm处进行低噪声单光子检测的放电脉冲计数

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Low-noise single-photon detection at 1550 nm was demonstrated using an indium-gallium-arsenide avalanche photodiode cooled to 130K. Discharge pulse counting was adopted for after-pulse-suppressed single-photon detection. The dark-count probability and after-pulse probability were 1.4 x 10~(-7) and 6.3 x 10~(-4), respectively, when the quantum efficiency was 10%. The repetition frequency of single-photon detection was 100 kHz.

机译：使用冷却至130K的砷化铟镓雪崩光电二极管证明了在1550 nm处的低噪声单光子检测。后脉冲抑制的单光子检测采用放电脉冲计数。当量子效率为10％时，暗计数概率和脉冲后概率分别为1.4 x 10〜（-7）和6.3 x 10〜（-4）。单光子检测的重复频率为100 kHz。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2007年第1期|p.220-222|共3页
作者
Akio Yoshizawa; Satoru Odate; Hidemi Tsuchida;
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作者单位

National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
single-photon detection; 1550nm; indium-gallium-arsenide avalanche photodiode; dark counts; after-pulses;

机译：单光子检测1550nm铟镓砷雪崩光电二极管暗计数脉冲后;

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专利

1. Single-photon counting for the 1300-1600-nm range by use of Peltier-cooled and passively quenched InGaAs avalanche photodiodes [J] . John G. Rarity, Thomas E. Wall, Kevin D. Ridley Applied optics . 2000,第36期

机译：使用Peltier冷却和被动淬火的InGaAs雪崩光电二极管对1300-1600 nm范围内的单光子计数
2. Sinusoidally Gated InGaAs Avalanche Photodiode with Direct Hold-Off Function for Efficient and Low-Noise Single-Photon Detection [J] . Qing-Lin Wu, Naoto Namekata, Shuichiro Inoue _Applied Physics Express . 2013,第6期

机译：具有直接释抑功能的正弦门InGaAs雪崩光电二极管，用于高效和低噪声单光子检测
3. Gated-mode single-photon detection at 1550 nm by discharge pulse counting [J] . Akio Yoshizawa, Ryosaku Kaji, Hidemi Tsuchida Applied Physics Letters . 2004,第18期

机译：通过放电脉冲计数在1550 nm处进行门控模式单光子检测
4. High-efficiency single-photon detection at 1550 nm using a cooled InGaAs avalanche photodiode [C] . Akio Yoshizawa, Hidemi Tsuchida International Quantum Electronics Conference . 2005

机译：使用冷却的Ingaas雪崩光电二极管在1550nm处高效单光子检测
5. Monte Carlo simulation of gain, noise, and speed of low-noise and high-speed avalanche photodiodes. [D] . Ma, Feng. 2003

机译：蒙特卡洛模拟低噪声和高速雪崩光电二极管的增益，噪声和速度。
6. Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes [O] . Siyu Cao, Yue Zhao, Shuai Feng, 2019

机译：InGaAs / InAlAs单光子雪崩光电二极管的理论分析
7. Comprehensive characterization of InGaAs-InP avalanche photodiodes at 1550nm with an active quenching ASIC [O] . Zhang, Jun, Thew, Robert Thomas, Gautier, Jean-Daniel, 2009

机译：有源淬火ASIC对InGaAs-InP雪崩光电二极管在1550nm处的全面表征

Discharge Pulse Counting for Low-Noise Single-Photon Detection at 1550 nm Using InGaAs Avalanche Photodiode Cooled to 130 K

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