Realization of High-Crystalline-Quality Thick m-Plane GaInN Film on 6H-SiC Substrate by Epitaxial Lateral Overgrowth

Ryota Senda; Aya Miura; Takemasa Hayakawa; Takeshi Kawashima; Daisuke Iida; Tetsuya Nagai; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

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Realization of High-Crystalline-Quality Thick m-Plane GaInN Film on 6H-SiC Substrate by Epitaxial Lateral Overgrowth

机译：外延横向生长在6H-SiC衬底上实现高晶质厚m平面GaInN薄膜的实现

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A high-crystalline-quality thick m-plane Ga_(0.92)In_(0.08)N film has been realized by epitaxial lateral overgrowth (ELO). The photoluminescence intensity of thick ELO-GaInN is about 6 times stronger than that of conventional thick GalnN. We fabricated a light-emitting diode (LED) having a GaInN/GaN multiquantum wells (MQWs) active layer on an ELO-GaInN layer. Satellite peaks of (1010) in the 2θ/ω-scan X-ray diffraction profile from this LED can be clearly observed, suggesting that MQWs having a sharp interface are grown. This new LED exhibits blue-light emission with a peak wavelength of 450 nm.

机译：通过外延横向过生长（ELO）已经实现了高质量的厚m平面的Ga_（0.92）In_（0.08）N薄膜。厚ELO-GaInN的光致发光强度是常规厚GalnN的6倍。我们制造了在ELO-GaInN层上具有GaInN / GaN多量子阱（MQW）有源层的发光二极管（LED）。可以清楚地观察到来自该LED的2θ/ω扫描X射线衍射图中的（1010）卫星峰，这表明具有清晰界面的MQW得以生长。这种新的LED具有峰值波长为450 nm的蓝光发射。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2007年第40期|p.L948-L950|共3页
作者
Ryota Senda; Aya Miura; Takemasa Hayakawa; Takeshi Kawashima; Daisuke Iida; Tetsuya Nagai; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki;
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作者单位

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
thick GalnN layer; epitaxial lateral growth; m-plane; PL; LED;

机译：GalnN厚层;外延横向生长;m面;PL;LED;

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专利

1. Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth [J] . Ryota Senda, Aya Miura, Takeshi Kawashima, Physica status solidi . 2008,第9期

机译：利用侧壁外延横向过生长提高m平面6H-SiC衬底上厚GaInN的晶体质量
2. Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth [J] . T. Kawashima, T. Hayakawa, M. Hayashi, Physica status solidi . 2008,第6期

机译：通过侧壁外延横向过生长提高在m平面SiC上生长的m平面GaInN发光二极管的性能
3. Epitaxial lateral growth of m-plane GaN and Al_(0.18)Ga_(0.82)N on m-plane 4H-SiC and 6H-SiC substrates [J] . T. Kawashima, T. Nagai, D. Iida, Journal of Crystal Growth . 2007,第Jan期

机译：在m平面4H-SiC和6H-SiC衬底上外延生长m平面GaN和Al_（0.18）Ga_（0.82）N
4. Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth [C] . T. Kawashima, T. Hayakawa, M. Hayashi, International Conference of Nitride Semiconductors . 2008

机译：侧壁外延横向过度生长在M平面SiC上生长的M平面Gainn发光二极管性能的改进
5. Threading dislocation reduction in gallium nitride thin films on sapphire via lateral epitaxial overgrowth. [D] . Fini, Paul Thomas. 2000

机译：蓝宝石上的氮化镓薄膜通过横向外延过生长来减少螺纹位错。
6. Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates [O] . Yu-Chiao Lin, Ikai Lo, Hui-Chun Shih, 2017

机译：在γ-LiAlO2（100）衬底上生长的M平面GaN薄膜的生长和表征
7. Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence. [O] . A. Petersson, Anders Gustafsson, L. Samuelson, 2002

机译：通过阴离子发光确定的6H-SiC基材上的AlGaN外延膜的组成变化。
8. Large Area Lateral Epitaxial Overgrowth (LEO) of Gallium Nitride (GaN) Thin Films on Silicon Substrates and Their Characterization [R] . Davis, R. F. , Linthicum, K. J. , Gehrke, T. , 1999

机译：硅衬底上氮化镓（GaN）薄膜的大面积外延过量生长（LEO）及其表征

Realization of High-Crystalline-Quality Thick m-Plane GaInN Film on 6H-SiC Substrate by Epitaxial Lateral Overgrowth

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