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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
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Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate

机译：锗衬底上超薄氧化镧薄膜的特性：与硅衬底上的比较

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摘要

Ultrathin La_2O_3 films deposited on Ge substrates were characterized. The films were deposited by electron-beam evaporation in an ultrahigh vacuum system and were subjected to post-deposition annealing at various temperatures in N_2 ambient. There was little interfacial layer growth at the interface of La_2O_3/Ge, which was confirmed by transmission electron microscopy and spectroscopic ellipsometry. Electrical measurements revealed that a small capacitance equivalent thickness of 1.48 nm with a leakage current density of 6 x 10~(-7) A/cm~2 at 1 V was achieved using a Pt/La_2O_3/Ge structure by post-deposition annealing at 600℃. This result suggests that ultrathin La_2O_3 films can be grown on a Ge substrate by annealing at a sufficiently high temperature for activating the source and drain regions for a Ge metal-oxide-semiconductor field-effect transistor.
机译：表征了沉积在Ge衬底上的超薄La_2O_3薄膜。在超高真空系统中通过电子束蒸发沉积薄膜，并在N_2环境中的不同温度下进行沉积后退火。 La_2O_3 / Ge的界面几乎没有界面层的生长，这可以通过透射电子显微镜和椭圆偏振光谱法得到证实。电学测量表明，使用Pt / La_2O_3 / Ge结构通过在110℃下进行后退火，可实现1.48 nm的小电容当量厚度和1 V下的泄漏电流密度为6 x 10〜（-7）A / cm〜2 600℃。该结果表明，通过在足够高的温度下退火以激活Ge金属氧化物半导体场效应晶体管的源极和漏极区域，可以在Ge衬底上生长超薄La_2O_3膜。

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