Thermal Stability of Lanthanum Oxynitride Ultrathin Films Deposited on Silicon Substrates

Nobuhito KAWADA; Masahiko ITO; Yoji SAITO

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Thermal Stability of Lanthanum Oxynitride Ultrathin Films Deposited on Silicon Substrates

机译：沉积在硅基底上的氧氮化镧超薄膜的热稳定性

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摘要

We prepared lanthanum oxynitride films on p-type Si(100) substrates by electron beam evaporation. The films were deposited by evaporating lanthanum at a substrate temperature of 300 ℃, and introducing oxygen and nitrogen radicals into a chamber. After the thermal annealing of the films at 600 ℃ for 30 min, the composition and depth profile of the films were investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES), respectively. We found that lanthanum oxynitride films suppress Si diffusion from the substrate as compared with lanthanum oxide films.

机译：我们通过电子束蒸发在p型Si（100）衬底上制备了氧氮化镧薄膜。通过在300℃的衬底温度下蒸发镧，然后将氧和氮自由基引入腔室中来沉积薄膜。薄膜在600℃下热退火30min后，分别通过X射线光电子能谱（XPS）和俄歇电子能谱（AES）研究了薄膜的组成和深度分布。我们发现，与氧化镧膜相比，氧氮化镧膜抑制了Si从衬底的扩散。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2006年第12期|p.9197-9199|共3页
作者
Nobuhito KAWADA; Masahiko ITO; Yoji SAITO;
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作者单位

Department of Electrical Engineering and Electronics, Seikei University, 3-3-1 Kichijoji-Kitamachi, Musashino, Tokyo 180-8633, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
high-k; dielectrics; lanthanum; oxynitride; XPS; AES;

机译：高k;电介质;镧;氮氧化物;XPS;AES;

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3. Alternate lanthanum oxide/silicon oxynitride-based gate stack performance enhancement due to ultrathin oxynitride interfacial layer for CMOS applications [J] . Prachi Gupta, Mahesh Soni, Satinder K. Sharma Journal of materials science . 2020,第3期

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5. Bending of nanoscale ultrathin silicon film on insulator by deposited germanium thin films. [D] . Huang, Ming-Huang. 2006

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机译：氧化硅衬底上薄，连续铝合金薄膜热应力循环的模拟。

Thermal Stability of Lanthanum Oxynitride Ultrathin Films Deposited on Silicon Substrates

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