Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient

Tadao Hashimoto; Feng Wu; James S. Speck; Shuji Nakamura

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Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient

机译：多晶氮化镓营养剂的氨热法生长低位错密度的块状氮化镓

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摘要

A bulk GaN crystal with improved structural quality was grown via ammonthermal growth with polycrystalline GaN nutrient and a sodium amide mineralizer. The threading dislocation density estimated by plan-view transmission electron microscopy observations was less than 1 x 10~6 cm~(-2) for the Ga-face and 1 x 10~7 cm~(-2) for the N-face. There was no dislocation generation observed at the interface on the Ga-face although a few defects were generated at the interface on the N-face. The chemical etching revealed macroscopic grains on the N-face.

机译：通过采用多晶GaN营养液和氨基钠矿化剂进行氨热生长，可以生长出具有改善结构质量的块状GaN晶体。通过平面透射电子显微镜观察估计的螺纹位错密度对于Ga面小于1 x 10〜6 cm〜（-2），对于N面小于1 x 10〜7 cm〜（-2）。尽管在N面的界面上产生了一些缺陷，但在Ga面的界面上未观察到位错的产生。化学蚀刻显示出N面上的宏观晶粒。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2007年第24期|p.L525-L527|共3页
作者
Tadao Hashimoto; Feng Wu; James S. Speck; Shuji Nakamura;
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作者单位

Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
bulk GaN; ammonothermal growth; dislocations; etch pit density;

机译：体GaN;氨热生长;位错;刻蚀坑密度;

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1. Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method [J] . M. Rudzinski, R. Kudrawiec, L Janicki, Journal of Crystal Growth . 2011,第1期

机译：通过氨热法获得的c，m，a和（20.1）面GaN体衬底上GaN外延层的生长
2. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges [J] . Killat N., Montes Bajo M., Paskova T., Applied Physics Letters . 2013,第19期

机译：低位错密度块状GaN衬底上AlGaN / GaN高电子迁移率晶体管的可靠性：表面台阶边缘的含义
3. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges [J] . N. Killat, M. Montes Bajo, T. Paskova, Applied Physics Letters . 2013,第19期

机译：低位错密度块状GaN衬底上AlGaN / GaN高电子迁移率晶体管的可靠性：表面台阶边缘的含义
4. GaN based light emitters fabricated on bulk GaN substrates. New class of low dislocation density devices [C] . P. Perlin, M. Leszczynski, P. Prystawko, International Conference on Physics of Light-Matter Coupling in Nanostructures . 2004

机译：GaN基光发射器在散装GaN基材上制造。新一类低位错密度装置
5. Bulk growth of group III nitrides by the chemical vapor reaction process and the ammonothermal method. [D] . Hashimoto, Tadao. 2005

机译：通过化学气相反应法和氨热法大量生长III族氮化物。
6. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs [O] . Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, -1

机译：接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
7. Contactless electroreflectance of algan/gan heterostructures deposited on c-, a-, m-, and (20.1)-plane gan bulk substrates grown by ammonothermal method [O] . Kudrawiec R., Rudzinski M., Gladysiewicz M., 2011

机译：通过氨热法生长在c，a，m和（20.1）平面gan本体衬底上沉积的algan / gan异质结构的非接触电反射

Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient

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