Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation

Kohei SAKAIKE; Seiichiro HIGASHI; Hirotaka KAKU; Hideki MURAKAMI; Seiichi MIYAZAKI

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Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation

机译：半导体二极管激光辐照引起的微晶硅膜的熔化和凝固

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Rapid thermal annealing of microcrystalline Si (μc-Si) films induced by cw semiconductor diode laser (SDL) irradiation has been investigated. Owing to the higher absorption coefficient of μc-Si than that of amorphous Si (a-Si), 1.2-μm-thick μc-Si films are melted and recrystallized within 3 ms, whereas no phase transformation of a-Si films is observed under the same annealing condition. The annealed Si films show a high crystalline volume fraction of 97% and [111] preferential orientation. Characteristic triangle surface structures aligned to the laser scanning direction, which suggests that the lateral solidification from molten Si is observed.

机译：研究了连续半导体二极管激光器（SDL）辐射诱导的微晶硅（μc-Si）薄膜的快速热退火。由于μc-Si的吸收系数高于非晶硅（a-Si）的吸收系数，因此厚度为1.2-μm的μc-Si膜在3 ms内熔化并重结晶，而在此条件下未观察到a-Si膜的相变相同的退火条件。退火的硅膜显示出97％的高晶体体积分数和[111]优先取向。与激光扫描方向对齐的特征三角形表面结构表明观察到了熔融硅的横向凝固。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2007年第3b期|p.1276-1279|共4页
作者
Kohei SAKAIKE; Seiichiro HIGASHI; Hirotaka KAKU; Hideki MURAKAMI; Seiichi MIYAZAKI;
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作者单位

Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan;

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正文语种 eng
中图分类应用物理学;
关键词
rapid thermal annealing; crystallization; semiconductor diode laser; microcrystalline si; polycrystalline si;

机译：快速热退火;结晶;半导体二极管激光器;微晶硅;多晶硅;

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Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation

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