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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
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Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition

机译：常压等离子体化学气相沉积在低温下生长的无缺陷外延硅膜的光致发光研究

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High-quality epitaxial Si films have been grown at low temperatures (500-600℃) by atmospheric pressure plasma chemical vapor deposition (AP-PCVD) with a high growth rate (0.31 μm/min at 600℃ averaged over the 4-in. wafer). In contrast to the previous reports on other low-temperature CVD Si, the films in the present study are defect-free as observed by transmission electron microscopy and selective etching, and show no oxygen and carbon pileups at the film/substrate interface. To characterize defect-free epitaxial films with high sensitivity, we employed a photoluminescence (PL) method. When the epitaxial layer has better quality than the substrate, PL spectrum at 4.2 K mainly reveals the property of the substrate. On the other hand, room temperature PL measurements clearly show that the PL intensities of the surface-passivated epitaxial Si samples are much higher than that of Czochralski (CZ)-Si, which indicates a longer minority carrier recombination lifetime in the epitaxial Si layer than the bulk lifetime in CZ-Si.
机译：通过大气压等离子体化学气相沉积（AP-PCVD）在低温（500-600℃）上生长了高质量的外延Si膜，在4英寸下的平均生长速率高（600℃时为0.31μm/ min）。晶圆）。与先前有关其他低温CVD Si的报道相比，本研究中的膜通过透射电子显微镜和选择性蚀刻观察发现无缺陷，并且在膜/衬底界面处没有氧和碳堆积。为了表征具有高灵敏度的无缺陷外延膜，我们采用了光致发光（PL）方法。当外延层具有比基板更好的质量时，在4.2 K下的PL光谱主要揭示了基板的特性。另一方面，室温P​​L测量清楚地表明，表面钝化外延Si样品的PL强度比Czochralski（CZ）-Si高得多，这表明外延Si层中的少数载流子复合寿命比CZ-Si的总寿命。

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