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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Ⅲ-Ⅴ Metal-Oxide-Semiconductor Field-Effect Transistors with High κ Dielectrics
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Ⅲ-Ⅴ Metal-Oxide-Semiconductor Field-Effect Transistors with High κ Dielectrics

机译：高κ介电系数的Ⅲ-Ⅴ型金属氧化物半导体场效应晶体管

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Research efforts on achieving low interfacial density of states (D_(it)) as well as low electrical leakage currents on GaAs-based Ⅲ-Ⅴ compound semiconductors are reviewed. Emphasis is placed on ultra high vacuum (UHV) deposited Ga_2O_3(Gd_2O_3) and atomic layer deposition (ALD)-Al_2O_3 on GaAs and InGaAs. Ga_2O_3(Gd_2O_3), the novel oxide, which was electron-beam evaporated from a gallium-gadolinium-garnet target, has, for the first time, unpinned the Fermi level of the oxide/GaAs heterostructures. Interfacial chemical properties and band parameters of valence band offsets and conduction band offsets in the oxides/Ⅲ-Ⅴ heterostructures are studied and determined using X-ray photoelectron spectroscopy and electrical leakage transport measurements. The mechanism of Ⅲ-Ⅴ surface passivation is discussed. The mechanism of Fermi-level unpinning in ALD-Al_2O_3 ex-situ deposited on InGaAs were studied and unveiled. Systematic heat treatments under various gases and temperatures were studied to achieve low leakage currents of 10~(-8)-10~(-9) A/cm~2 and low D_(it)'s in the range of (4-9) x 10~(10)cm~(-2)eV~(-1) for Ga_2O_3(Gd_2O_3) on InGaAs. By removing moisture from the oxide, thermodynamic stability of the Ga_2O_3(Gd_2O_3)/GaAs heterostructures was achieved with high temperature annealing, which is needed for fabricating inversion-channel metal-oxide-semiconductor filed-effect transistors (MOSFET's). The oxide remains amorphous and the interface remains intact with atomic smoothness and sharpness. Device performances of inversion-channel and depletion-mode Ⅲ-Ⅴ MOSFET's are reviewed, again with emphasis on the devices using Ga_2O_3(Gd_2O_3) as the gate dielectric.
机译：综述了在基于GaAs的Ⅲ-Ⅴ族化合物半导体上实现低界面密度（D_（it））和低漏电流的研究工作。重点放在GaAs和InGaAs上的超高真空（UHV）沉积的Ga_2O_3（Gd_2O_3）和原子层沉积（ALD）-Al_2O_3上。 Ga_2O_3（Gd_2O_3）是一种新型的氧化物，它是从镓-d-石榴石靶上电子束蒸发而成的，首次使该氧化物/ GaAs异质结构的费米能级不固定。研究了氧化物/Ⅲ-Ⅴ异质结构的界面化学性质和价带偏移和导带偏移的能带参数，并利用X射线光电子能谱和漏电传输法进行了测定。探讨了Ⅲ-Ⅴ型表面钝化的机理。研究并揭示了在InGaAs上异位沉积ALD-Al_2O_3中费米能级的脱钉机理。研究了在各种气体和温度下的系统热处理，以实现低泄漏电流10〜（-8）-10〜（-9）A / cm〜2和低D_（it）在（4-9）范围内InGaAs上的Ga_2O_3（Gd_2O_3））x 10〜（10）cm〜（-2）eV〜（-1）通过去除氧化物中的水分，通过高温退火实现了Ga_2O_3（Gd_2O_3）/ GaAs异质结构的热力学稳定性，这是制造反向沟道金属氧化物半导体场效应晶体管（MOSFET）所必需的。氧化物保持无定形，界面保持完整，并具有原子平滑度和锐度。回顾了反向沟道和耗尽型Ⅲ-ⅤMOSFET的器件性能，再次重点介绍了以Ga_2O_3（Gd_2O_3）作为栅极电介质的器件。

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