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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Which Mask is Preferred for Sub-60 nm Node Imaging?
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Which Mask is Preferred for Sub-60 nm Node Imaging?

机译：60nm以下的节点成像首选哪种掩模？

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摘要

ArF immersion lithography may be the best candidate for sub-60 nm device patterning. However, the polarization effect is the most prominent root cause for the degradation of the image quality in high numerical aperture (NA) immersion lithography as the feature size shrinks. Therefore, it is important to understand the polarization effect in the mask. It is common knowledge that a small mask pattern is considered as the wave guide of transmission light. The induced polarization effect shows the different aspects between the conventional mask and the attenuated phase-shift mask (PSM). In this paper, we considered the effects of polarization state as a function of mask properties. The aerial image depends on the polarization states induced by the mask. We evaluated the performances of the conventional mask and the attenuated PSM by using the Solid-E™ simulation and AIMS™ (Aerial Image Measurement System) tool along with real wafer printing.
机译：ArF浸没式光刻技术可能是60nm以下器件图案化的最佳选择。然而，随着特征尺寸的缩小，偏振效应是导致高数值孔径（NA）浸没式光刻中图像质量下降的最主要原因。因此，了解掩模中的偏振效应很重要。众所周知，小掩模图案被认为是透射光的波导。诱发的极化效应显示了传统掩模与衰减相移掩模（PSM）之间的不同方面。在本文中，我们考虑了偏振态的影响与掩模特性的关系。航拍图像取决于掩模引起的偏振态。我们通过使用Solid-E™模拟和AIMS™（航空影像测量系统）工具以及真实的晶圆印刷，评估了传统掩模和衰减后的PSM的性能。

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