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首页> 外文期刊>Journal of microanolithography, MEMS, and MOEMS >Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond
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Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond

机译：适用于14纳米及以上节点的光学邻近校正模型中的精确掩模模型实现

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摘要

In a previous work, we demonstrated that the current optical proximity correction model assuming the mask pattern to be analogous to the designed data is no longer valid. An extreme case of line-end shortening shows a gap up to 10 nm difference (at mask level). For that reason, an accurate mask model has been calibrated for a 14-nm logic gate level. A model with a total RMS of 1.38 nm at mask level was obtained. Two-dimensional structures, such as line-end shortening and corner rounding, were well predicted using scanning electron microscopy pictures overlaid with simulated contours. The first part of this paper is dedicated to the implementation of our improved model in current flow. The improved model consists of a mask model capturing mask process and writing effects, and a standard optical and resist model addressing the litho exposure and development effects at wafer level. The second part will focus on results from the comparison of the two models, the new and the regular.
机译：在先前的工作中，我们证明了假设光罩图案类似于设计数据的当前光学邻近校正模型不再有效。极端情况下，线端缩短会出现最大10 nm的间隙（在掩模水平）。因此，已经针对14纳米逻辑门电平校准了精确的掩模模型。获得了在掩模水平下总RMS为1.38 nm的模型。使用覆盖有模拟轮廓的扫描电子显微镜图片，可以很好地预测二维结构，例如线端缩短和圆角倒圆。本文的第一部分致力于在电流中实现改进的模型。改进的模型包括捕获掩模工艺和写入效果的掩模模型，以及解决晶片级光刻曝光和显影效果的标准光学和抗蚀剂模型。第二部分将重点讨论两种模型（新模型和常规模型）的比较结果。

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  • 来源
    《Journal of microanolithography, MEMS, and MOEMS》 |2016年第2期|021011.1-021011.8|共8页
  • 作者

    Nacer Zine El Abidine; Frank Sundermann; Emek Yesilada; Vincent Farys; Frederic Huguennet; Ana-Maria Armeanu; Ingo Bork; Michael Chomat; Peter Buck; Isabelle Schanen;

  • 作者单位

    STMicroelectronics, 850, rue Jean Monnet, F 38926 Crolles Cedex, France,Institut de Microelectronique, Electromagnetisme et Photonique-Laboratoire d'Hyperfrequences et Caracterisation, Minatec, 3 rue Parvis Louis Neel, CS 50257, 38016 Grenoble Cedex 1, France;

    STMicroelectronics, 850, rue Jean Monnet, F 38926 Crolles Cedex, France;

    STMicroelectronics, 850, rue Jean Monnet, F 38926 Crolles Cedex, France;

    STMicroelectronics, 850, rue Jean Monnet, F 38926 Crolles Cedex, France;

    Mentor Graphics Corporation, 110 Rue Blaise Pascal, 38330 Montbonnot-Saint-Martin, France;

    Mentor Graphics Corporation, 110 Rue Blaise Pascal, 38330 Montbonnot-Saint-Martin, France;

    Mentor Graphics Corporation, 46871 Bayside Parkway Fremont, California 94538, United States;

    Mentor Graphics Corporation, 110 Rue Blaise Pascal, 38330 Montbonnot-Saint-Martin, France;

    Mentor Graphics Corporation, 46871 Bayside Parkway Fremont, California 94538, United States;

    Institut de Microelectronique, Electromagnetisme et Photonique-Laboratoire d'Hyperfrequences et Caracterisation, Minatec, 3 rue Parvis Louis Neel, CS 50257, 38016 Grenoble Cedex 1, France;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    mask model; optical review check; mask process correction; ebeam writer; contours fitting;

    机译：面具模型光学检查检查;掩膜工艺校正;电子束作家轮廓拟合;

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