PROBLEM TO BE SOLVED: To produce an etching proximity effect correction model correcting a mask pattern with respect to an etching proximity effect with high accuracy.;SOLUTION: A method of producing the etching proximity effect correction model includes: a step S36 of calculating the shift amount of an etched pattern based on a simulation value of line width of a resist pattern calculated by simulating the resist pattern formed on a wiring forming surface of a substrate using a lithography proximity effect correction model and an observed value of line width of a wiring pattern formed by etching the wiring forming surface of the substrate using the resist pattern as a mask; and steps S37 and S38 of producing the etching proximity effect correction model by fitting the shift amount by means of a least square method using the correction model in which a pattern size and an inter-pattern space size are set as parameters.;COPYRIGHT: (C)2011,JPO&INPIT
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