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How to create etch proximity effect correction model, manufacturing method of an etching proximity effect correction model, a method of correcting the mask pattern, a photomask, a semiconductor device, and semiconductor device

机译：如何创建蚀刻邻近效应校正模型，蚀刻邻近效应校正模型的制造方法，校正掩模图案的方法，光掩模，半导体器件和半导体器件

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摘要

PPROBLEM TO BE SOLVED: To produce an etching proximity effect correction model correcting a mask pattern with respect to an etching proximity effect with high accuracy. PSOLUTION: A method of producing the etching proximity effect correction model includes: a step S36 of calculating the shift amount of an etched pattern based on a simulation value of line width of a resist pattern calculated by simulating the resist pattern formed on a wiring forming surface of a substrate using a lithography proximity effect correction model and an observed value of line width of a wiring pattern formed by etching the wiring forming surface of the substrate using the resist pattern as a mask; and steps S37 and S38 of producing the etching proximity effect correction model by fitting the shift amount by means of a least square method using the correction model in which a pattern size and an inter-pattern space size are set as parameters. PCOPYRIGHT: (C)2011,JPO&INPIT

机译：

要解决的问题：产生蚀刻邻近效应校正模型，以相对于蚀刻邻近效应以高精度校正掩模图案。解决方案：产生蚀刻邻近效应校正模型的方法包括：步骤S36，基于通过模拟形成在基板上的抗蚀剂图案而计算出的抗蚀剂图案的线宽的模拟值来计算蚀刻图案的偏移量。使用光刻邻近效应校正模型的基板的配线形成表面和通过使用抗蚀剂图案作为掩模蚀刻基板的配线形成表面而形成的配线图案的线宽的观测值;步骤S37和S38是通过使用校正模型通过最小二乘法拟合偏移量来产生蚀刻接近效应校正模型的步骤，其中，校正图案被设置为图案尺寸和图案间间隔尺寸。

版权：（C）2011，日本特许厅＆INPIT 展开▼

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公开/公告号JP5356089B2

专利类型
公开/公告日2013-12-04

原文格式PDF
申请/专利权人シャープ株式会社;
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申请/专利号JP20090080348
发明设计人田村好司;
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申请日2009-03-27
分类号H01L21/3065;G03F1/36;G03F1/70;H01L21/027;H01L21/82;
国家 JP
入库时间 2022-08-21 16:10:48

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