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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Restricted Optical Proximity Effect Correction Pattern Generation Based on Optical Proximity Effect Correction-Design for Manufacturability Rule in Model-Based Optical Proximity Effect Correction
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Restricted Optical Proximity Effect Correction Pattern Generation Based on Optical Proximity Effect Correction-Design for Manufacturability Rule in Model-Based Optical Proximity Effect Correction

机译：基于光学邻近效应校正的受限光学邻近效应校正模式生成-基于模型的光学邻近效应校正中的可制造性规则设计

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摘要

In the recent submicron technologies, the pattern formation on photomasks is increasing in its difficulty owing to the complexity of optical proximity effect correction (OPC) and resolution enhancement techniques (RET). The detection and repair of critical patterns after OPC or RET have become essential procedures for photomask preparation, and design rule check (DRC) or lithography simulation tools have often been used to verify these patterns. However, the detection and repair of critical patterns have been becoming an excessive burden in the development of lithography processes and mask data processing. In this paper, we describe how to detect and repair these OPC critical patterns in lithography using the OPC-DFM rule, which can be derived from the OPC extraction test element group (TEG) effectively and easily. This technology enables the removal of OPC critical patterns before photomask preparation.
机译：在最近的亚微米技术中，由于光学邻近效应校正（OPC）和分辨率增强技术（RET）的复杂性，在光掩模上形成图案的难度越来越大。在OPC或RET之后，关键图案的检测和修复已成为光掩模制备的必要程序，并且经常使用设计规则检查（DRC）或光刻模拟工具来验证这些图案。然而，关键图案的检测和修复已成为光刻工艺和掩模数据处理开发中的过多负担。在本文中，我们描述了如何使用OPC-DFM规则在光刻中检测和修复这些OPC临界图案，该规则可以有效，轻松地从OPC提取测试元素组（TEG）导出。这项技术可以在光掩模制备之前去除OPC关键图案。

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