Errata: Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects

Philip C. W. Ng Kuen-Yu Tsai Yen-Min Lee Fu-Min Wang Jia-Han Li and Alek C. Chen

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Errata: Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects

机译：勘误表：基于模型的方法同时校正极端紫外线掩模的阴影和邻近效应

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This article [J. Micro/Nanolith. MEMS MOEMS 10, 013004n(2011)] was originally published online 10 March 2011 withnan error in the algorithm appearing on page 8.

机译：本文[J.微/纳米石。 MEMS MOEMS 10，013004n（2011）]最初于2011年3月10日在线发布，但算法中出现了错误（第8页）。

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《Journal of Micro/Nanolithography,MEMS,and MOEMS》 |2011年第2期|p.1-1|共1页
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Philip C. W. Ng Kuen-Yu Tsai Yen-Min Lee Fu-Min Wang Jia-Han Li and Alek C. Chen;
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Philip C. W. NgKuen-Yu TsaiNational Taiwan UniversityDepartment of Electrical EngineeringNo. 1, Sec. 4, Roosevelt RoadTaipei 10617, TaiwanE-mail: kytsai@cc.ee.ntu.edu.twYen-Min LeeNational Taiwan UniversityDepartment of Engineering Scienceand Ocean EngineeringNo. 1, Sec. 4, Roosevelt RoadTaipei 10617, TaiwanFu-Min WangNational Taiwan UniversityGraduate Institute of Electronics EngineeringNo. 1, Sec. 4, Roosevelt RoadTaipei 10617, TaiwanJia-Han LiNational Taiwan UniversityDepartment of Engineering Scienceand Ocean EngineeringNo. 1, Sec. 4, Roosevelt RoadTaipei 10617, TaiwanAlek C. ChenASML Taiwan Ltd.Technology Development CenterNo. 59, Ke Ji 6th RoadGueishan, Taoyuan 33383, Taiwan;

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1. Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects [J] . Philip C. W. Ng, Kuen-Yu Tsai, Yen-Min Lee, Journal of microanolithography, MEMS, and MOEMS . 2011,第1期

机译：完全基于模型的方法，可同时校正极端紫外线掩模的阴影和邻近效应
2. Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects [J] . Philip C. W. Ng Kuen-Yu Tsai Yen-Min Lee Fu-Min Wang Jia-Han Li and Alek C. Chen Journal of Micro/Nanolithography,MEMS,and MOEMS . 2011,第1期

机译：完全基于模型的方法，可同时校正极端紫外线掩模的阴影和邻近效应
3. Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography [J] . Xiaolei Liu, Xiangzhao Wang, Sikun Li, Journal of microanolithography, MEMS, and MOEMS . 2014,第3期

机译：极紫外光刻中掩模光谱仿真的快速模型和掩模阴影效应分析
4. A Fully Model-Based Methodology for Simultaneously Correcting EUV Mask Shadowing and Optical Proximity Effects with Improved Pattern Transfer Fidelity and Process Windows [C] . Philip C. W. Ng, rnKuen-Yu Tsai, rnYen-Min Lee, Lithography Asia 2009 . 2009

机译：完全基于模型的方法论，可同时通过改进的图案转移保真度和工艺窗口来校正EUV掩模的阴影和光学邻近效应
5. Compensation of extreme ultraviolet lithography image field edge effects through optical proximity correction. [D] . Maloney, Chris. 2014

机译：通过光学邻近校正来补偿极紫外光刻图像场边缘效应。
6. Effects of non-simultaneous masking on the binaural masking level difference [O] . Emily Buss, Joseph W. Hall III -1

机译：非同时掩蔽对双耳掩蔽水平差异的影响
7. Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects? [O] . 2018

机译：极端紫外线的减毒相移掩模：它们是否可以减轻三维掩模效果？

Errata: Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects

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