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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Effect of Oxygen Plasma Irradiation on Hydrogen Silsesquioxane Nanopatterns Replicated by Room-Temperature Nanoimprinting
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Effect of Oxygen Plasma Irradiation on Hydrogen Silsesquioxane Nanopatterns Replicated by Room-Temperature Nanoimprinting

机译：氧等离子体辐照对室温倍数纳米压印复制氢倍半硅氧烷纳米图案的影响

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摘要

We investigated the effect of oxygen (O_2) plasma irradiation on hydrogen silsesquioxane (HSQ) patterns replicated by room-temperature nanoimprinting. The HSQ-imprinted patterns with rectangular shapes changed when heated to 200℃. Furthermore, they disappeared immediately when they were placed on a hot plate at a temperature of 300℃. In contrast, O_2 plasma preirradiation of HSQ-imprinted nanostructures prevented the pattern deformation during postbaking. Even at the high annealing temperature of 1000℃, HSQ-replicated patterns with 200 nm linewidth, retained its initial pattern profiles. The measured water contact angle of O_2-plasma-irradiated HSQ surface decreased from 104 to 25°. The relative intensity of O 1s/Si 2p of the O_2-irradiated HSQ surface, measured by X-ray photoemission spectroscopy increased from 3.13 to 4.23. These values were very close to those of thermally grown SiO_2 (26.2° and 4.87).
机译：我们调查了氧（O_2）等离子体辐射对氢硅倍半氧烷（HSQ）模式的影响，该模式通过室温纳米压印复制。加热到200℃时，具有矩形形状的HSQ压印图案发生了变化。此外，将它们放在300℃的加热板上后，它们会立即消失。相反，HSQ印迹纳米结构的O_2等离子体预辐照可防止后烘烤过程中的图案变形。即使在1000℃的高退火温度下，具有200 nm线宽的HSQ复制图案仍保留其初始图案轮廓。 O_2-等离子体辐照的HSQ表面的水接触角从104°降低到25°。 X射线光发射光谱法测量的O_2辐射的HSQ表面的O 1s / Si 2p相对强度从3.13增加到4.23。这些值非常接近热生长的SiO_2（26.2°和4.87）。

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