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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Modeling of Feature Profile Evolution in SiO_2 as functions of Radial Position and Bias Voltage under Competition among Charging, Deposition, and Etching in Two-Frequency Capacitively Coupled Plasma
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Modeling of Feature Profile Evolution in SiO_2 as functions of Radial Position and Bias Voltage under Competition among Charging, Deposition, and Etching in Two-Frequency Capacitively Coupled Plasma

机译：电容耦合等离子体在充电，沉积和刻蚀竞争下SiO_2特征轮廓演变与径向位置和偏置电压的关系模型

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摘要

A feature profile evolution model of a trench in SiO_2 is developed in a two-frequency capacitively coupled plasma in CF_4(5%)/Ar by considering two layers, a mixing layer and an overlaying polymer layer on the basis of a database of etching yield by extending our original physical computer-aided design (CAD) tool, VicAddress (vertically integrated computer-aided design for device processes). That is, the surface exposed to fluorocarbon plasma is considered under competition among the charging of electrons and ions, the deposition of radicals, and reactive etching by ions. The feature profile is also discussed in terms of the bias amplitude and the position on the wafer.
机译：在蚀刻产量数据库的基础上，通过考虑两层，混合层和覆盖聚合物层，在CF_4（5％）/ Ar的双频电容耦合等离子体中，开发了SiO_2中沟槽的特征轮廓演化模型。通过扩展我们原始的物理计算机辅助设计（CAD）工具VicAddress（用于设备过程的垂直集成计算机辅助设计）。即，认为暴露于碳氟化合物等离子体的表面处于电子和离子的带电，自由基的沉积以及离子的反应性蚀刻之间的竞争中。还根据偏置幅度和晶片上的位置来讨论特征轮廓。

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