Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen

QIXIN GUO; NOZOMU UESUGI; TOORU TANAKA; MITSUHIRO NISHIO; HIROSHI OGAWA

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Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen

机译：甲烷和氢气对氧化锌的反应性离子蚀刻

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The reactive ion etching characteristics of ZnO have been investigated as functions of CH_4/H_2 gas composition, total gas pressure, and radio frequency (rf) plasma power. It was found that the etching rate of ZnO strongly depends on gas composition and gas pressure, suggesting that the etching of ZnO largely involves a process in which a volatile metalorganic zinc compound is formed. The etching rate of ZnO increased linearly with rf plasma power owing to its high bond-breaking efficiency, dc bias, and the degree of sputter desorption of etch products.

机译：研究了ZnO的反应离子刻蚀特性与CH_4 / H_2气体成分，总气体压力和射频（rf）等离子体功率的关系。发现ZnO的蚀刻速率强烈地取决于气体组成和气压，这表明ZnO的蚀刻主要涉及形成挥发性金属有机锌化合物的过程。 ZnO的刻蚀速率随射频等离子体功率的增加而线性增加，这是由于其高的键断裂效率，直流偏置和刻蚀产物的溅射脱附程度。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2006年第11期|p.8597-8599|共3页
作者
QIXIN GUO; NOZOMU UESUGI; TOORU TANAKA; MITSUHIRO NISHIO; HIROSHI OGAWA;
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作者单位

Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
zinc oxide; reactive ion etching; CH_4 and H_2 gases; etching rate;

机译：氧化锌;反应离子刻蚀;CH_4和H_2气体;刻蚀速率;

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1. Selective etching and polymer deposition on InP surface in reactive ion etching with a mixture of methane and hydrogen [J] . Norio Yamamoto Journal of Vacuum Science & Technology . 2009,第6期

机译：甲烷和氢的混合物在反应离子刻蚀中InP表面的选择性刻蚀和聚合物沉积
2. Reactive adsorption of hydrogen sulfide on visible light photoactive zinc (hydr)oxide/graphite oxide and zinc (hydr)oxychloride/graphite oxide composites [J] . Oluwaniyi Mabayoje, Mykola Seredych, Teresa J. Bandosz Applied Catalysis, B. Environmental: An International Journal Devoted to Catalytic Science and Its Applications . 2013,第Null期

机译：硫化氢在可见光光活性氧化锌/氧化石墨和氧化锌-氯化氢/氧化石墨复合材料上的反应性吸附
3. Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma [J] . Abautret J., Evirgen A., Perez J. P., Semiconductor science and technology . 2015,第6期

机译：混合气体对电感耦合甲烷-氢等离子体中InSb反应离子刻蚀的影响
4. Self-selective formation of organic masks for methane/hydrogen reactive ion etching of InP [C] . Schramm, J.E., Yu, Indium Phosphide and Related Materials, 1992., Fourth International Conference on . 1992

机译：自选择性形成InP的甲烷/氢反应离子蚀刻有机掩模
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Selection of a cut-off for high- and low-methane producers using a spot-methane breath test: results from a large north American dataset of hydrogen methane and carbon dioxide measurements in breath [O] . Klaus Gottlieb, Chenxiong Le, Vince Wacher, 2018

机译：使用点甲烷呼气试验选择高甲烷和低甲烷生产者的临界值：北美大量氢气甲烷和二氧化碳的呼吸数据集
7. Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/nitrogen/silicon tetrachloride discharges at room temperature [O] . Sendra, J. R., Anguita, José Virgilio, Pérez Camacho, J. J., 1995

机译：在室温下电子回旋共振甲烷/氢/氮/四氯化硅放电中对铝铟锑化物，镓铟锑化物异质结构的反应离子束蚀刻
8. Cluster Based Reaction Probabilities for Boron with Oxygen, Hydrogen, Water, Nitrogen, Nitrous Oxide, Carbon Dioxide, Carbon Monoxide, Methane, Tetrafluoromethane, and Silane. [R] . Hintz, P. A., Ruatta, S. A., Anderson, S. L. 1989

机译：基于聚类的反应概率硼与氧，氢，水，氮，一氧化二氮，二氧化碳，一氧化碳，甲烷，四氟甲烷和硅烷。

Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen

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