Silicon Nitride Two-Level-Temperature Passivation on InP/InGaAsP Light-Emitting Diodes

JAEHO KIM; JUNG-HO CHA; YOUNG-SE KWON

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Silicon Nitride Two-Level-Temperature Passivation on InP/InGaAsP Light-Emitting Diodes

机译：InP / InGaAsP发光二极管上的氮化硅二级温度钝化

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摘要

The use of silicon nitride with a two-level temperature technique is proposed for the passivation of InP-based devices. InGaAsP/InP light-emitting diodes (LEDs) were fabricated by this passivation technique. The reverse current was decreased by about two orders of magnitude, and light-current linearity at a low current was improved.

机译：提出了将氮化硅与两级温度技术一起用于InP基器件的钝化。通过该钝化技术制造了InGaAsP / InP发光二极管（LED）。反向电流减小了大约两个数量级，并且在低电流下的光电流线性度得到改善。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2006年第11期|p.8648-8649|共2页
作者
JAEHO KIM; JUNG-HO CHA; YOUNG-SE KWON;
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作者单位

Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
passivation; silicon nitride; two-level temperature; indium phosphide; InGaAsP; light-emitting diodes;

机译：钝化氮化硅二级温度磷化铟InGaAsP发光二极管;

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专利

1. LPE GROWTH AND CHARACTERIZATION OF INGAASP/INP HETEROSTRUCTURES - IR LIGHT-EMITTING DIODES AT 1.66 MU-M - APPLICATION TO THE REMOTE MONITORING OF METHANE GAS [J] . Volkov VV., Marushkin K., Gijbels R., Sensors and Actuators, A. Physical . 1997,第1a3期

机译：LPE的生长和INGAASP / INP异质结构的表征-1.66 MU-M的红外发光二极管-在甲烷气体远程监测中的应用
2. LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas [J] . V.V. Volkov, J. Van Landuyt, K. Marushkin Sensors and Actuators, A. Physical . 1997,第1a3期

机译：LPE的生长和InGaAsP / InP异质结构的特征：1.66μm的红外发光二极管。在甲烷气体远程监测中的应用
3. Temperature Behaviour of Pulse Repetition Frequency in Passively Mode-Locked InGaAsP/InP Laser Diode—Experimental Results and Simple Model [J] . Wei Kiong Tan, Hin-Yong Wong, Kelly A.E., IEEE journal of selected topics in quantum electronics . 2007,第期

机译：被动锁模InGaAsP / InP激光二极管中脉冲重复频率的温度行为—实验结果和简单模型
4. 1.3-um and 1.55-um InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence [C] . Xiaoyu Ma, Institute of Semiconductors, Beijing, Integrated Optoelectronics . 1996

机译：具有窄束发散的1.3um和1.55um InGaAsP / InP量子阱发光二极管
5. Recombination dynamics in silicon-doped aluminum gallium nitride and ultraviolet light-emitting diodes grown on sapphire and bulk aluminum nitride substrates by metal-organic vapor-phase epitaxy [D] . Chen, Kaixuan 2008

机译：通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
6. Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes [O] . Tsung-Rong Kuo, Shih-Ting Hung, Yen-Ting Lin, 2017

机译：InP / ZnS核/壳量子点的绿色合成用于无重金属的发光二极管
7. Ion-Beam Etching of InP and Its Application to the Fabrication of High Radiance InGaAsP/InP Light Emitting Diodes [O] . H. Angerstein-kozlowska, B. Macdougall, R. R. Adzic, 1983

机译：Inp的离子束刻蚀及其在高辐射InGaasp / Inp发光二极管制备中的应用

Silicon Nitride Two-Level-Temperature Passivation on InP/InGaAsP Light-Emitting Diodes

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