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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >In Situ Observation of Initial Nucleation and Growth of Chemical Vapor Deposition of Copper by Surface Reflectivity Measurement
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In Situ Observation of Initial Nucleation and Growth of Chemical Vapor Deposition of Copper by Surface Reflectivity Measurement

机译：通过表面反射率测量原位观察铜的初始成核和化学气相沉积的生长

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摘要

Initial nucleation and growth of Cu thin films on a Ta substrate via chemical vapor deposition (Cu-CVD) for ultra large scale integration (ULSI) interconnects is monitored in situ by irradiating the substrate surface with 635-nm-wavelength laser light and then measuring the change in reflected-light intensity. The effect of injection of water vapor during deposition on initial nucleation and growth is investigated by using X-ray photoelectron spectroscopy (XPS) to measure the surface chemical state of the Ta substrate. Results show that water-vapor injection during Cu-CVD enhances both the nucleation and growth of Cu by introducing adsorbed OH groups onto the substrate surface and yields a smooth, continuous surface morphology. The optimal time at which to inject water vapor before and/or during deposition is also determined using our in situ monitoring technique.
机译：通过用635 nm波长的激光束照射衬底表面并随后进行测量，可以通过化学气相沉积（Cu-CVD）在Ta衬底上进行超大规模集成（ULSI）互连的Cu薄膜的初始成核和生长过程进行现场监测反射光强度的变化。通过使用X射线光电子能谱（XPS）测量Ta衬底的表面化学状态，研究了沉积过程中水蒸气的注入对初始成核和生长的影响。结果表明，在Cu-CVD过程中注入水蒸气可通过将吸附的OH基团引入基材表面来增强Cu的形核和生长，并产生光滑，连续的表面形态。还可以使用我们的现场监测技术确定在沉积之前和/或期间注入水蒸气的最佳时间。

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