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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Control of Preferential Orientation of Platinum Films on RuO_2/SiO_2/Si Substrates by Sputtering
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Control of Preferential Orientation of Platinum Films on RuO_2/SiO_2/Si Substrates by Sputtering

机译：溅射控制RuO_2 / SiO_2 / Si衬底上铂薄膜的择优取向。

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摘要

We investigated the preferential orientation of Pt films deposited on RuO_2/SiO_2/Si substrates at a substrate temperature of 100℃ by RF magnetron sputtering, using only Ar gas without O_2 gas. It was found that, for a sputtering power less than 30 W and a sputtering gas pressure of 10 Pa, the Pt(100)-oriented volume ratio over the whole Pt film rapidly increases with film thickness. However, for a sputtering power more than 50 W and the same pressure, the ratio slightly increases with thickness, and it is suppressed by increasing the power. On the other hand, the Pt(111)-oriented volume ratio is smaller and decreases with thickness irrespective of the power, whereas it is increased by decreasing the pressure to 4 Pa at 20 W. From these results, it can be considered that (111)-oriented crystalline growth is mainly driven by the lowest surface energy and that (100)-oriented growth is mainly driven by the strain energy due to intrinsic tensile stress which is increased with thickness and pressure, and decreased with power.
机译：我们研究了通过RF磁控溅射在RuO_2 / SiO_2 / Si衬底上沉积的Pt膜在100℃衬底温度下的优先取向，仅使用Ar气体而不使用O_2气体。已经发现，对于小于30W的溅射功率和10Pa的溅射气压，在整个Pt膜上的Pt（100）取向的体积比随着膜厚度而迅速增加。然而，对于大于50W且相同压力的溅射功率，该比率随厚度而略微增加，并且通过增加功率来抑制。另一方面，Pt（111）取向的体积比较小，并且与厚度无关，与功率无关，而通过在20 W时将压力降低至4 Pa可以增加。从这些结果可以认为（ 111）取向的晶体生长主要由最低的表面能驱动，而（100）取向的生长主要由应变能驱动，这是由于固有拉伸应力引起的，该拉伸应力随厚度和压力的增加而随功率的降低而减小。

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