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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Characterizing the Channel Backscattering Behavior in Nanoscale Strained Complementary Metal Oxide Semiconductor Field-Effect Transistors
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Characterizing the Channel Backscattering Behavior in Nanoscale Strained Complementary Metal Oxide Semiconductor Field-Effect Transistors

机译：表征纳米级应变互补金属氧化物半导体场效应晶体管中的沟道反向散射行为

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摘要

This work investigates the impact of different uniaxial strain polarities on channel backscattering in nanoscale complementary metal oxide semiconductor field-effect transistor (CMOSFET). Two carrier statistics, nondegenerate and degenerate-limited, are employed to extract the channel backscattering ratio, ballistic efficiency, and related backscattering factors. While the channel length scales down and the channel stress level increases further, the modulation of channel backscattering ratio, i.e., improved (degraded) by uniaxial tensile (compressive) strain, becomes more prominent. This observation holds true under both carrier statistics, which implies that the nondegenerate case with simple mathematics can be fairly used for evaluation. In addition, the correlation between strain-enhanced mobility gain and drain current improvement is found to be predicted well by the ballistic efficiency deduced with the nondegenerate carrier statistics.
机译：这项工作研究了不同的单轴应变极性对纳米级互补金属氧化物半导体场效应晶体管（CMOSFET）中沟道反向散射的影响。使用两个简并的非简并简简载波统计数据来提取信道后向散射比，弹道效率和相关的后向散射因子。当通道长度按比例减小并且通道应力水平进一步增加时，通道后向散射比的调制，即通过单轴拉伸（压缩）应变而改善（降低）的调制变得更加突出。在两个运营商的统计数据中，这一观察结果都是正确的，这意味着具有简单数学的非退化情况可以公平地用于评估。此外，发现应变增强的迁移率增益与漏极电流改善之间的相关性可通过非简并载流子统计数据推导的弹道效率很好地预测。

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