• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Effect of H_2 Addition during Cu Thin-Film Sputtering
【24h】

Effect of H_2 Addition during Cu Thin-Film Sputtering

机译：铜薄膜溅射过程中H_2添加的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have investigated the effect of H_2 addition during Cu sputtering. It was found that the Cu surface becomes smooth with increasing amount of H_2 added to Ar plasma during Cu sputtering. The arithmetical mean roughness decreases by 40% with H_2 (60%) addition. The X-ray diffraction peak intensity ratio [Cu(111)/Cu(200)] increases with H_2 content, which indicates that the crystallinity of the Cu film has been improved. The property of Cu filling in the contact hole is much improved by H_2 addition sputtering after low-temperature annealing (350 ℃). Cu film was electroplated on the sputtered Cu. The roughness of the electroplated Cu surface does not depend on the roughness of the initial sputtered Cu surface even though H_2 is added during Cu sputtering. However, the crystal orientation of the electroplated Cu film [(111)/(200) ratio] can be controlled by the crystal orientation of the seed sputtered Cu film; that is, H_2 addition during Cu sputtering results in a good crystal orientation of the electroplated Cu film.
机译：我们研究了铜溅射过程中添加H_2的影响。发现在Cu溅射期间，随着添加到Ar等离子体中的H_2的量增加，Cu表面变得光滑。加入H_2（60％）后，算术平均粗糙度降低40％。 X射线衍射峰强度比[Cu（111）/ Cu（200）]随着H_2含量的增加而增加，这表明Cu膜的结晶度得到了改善。低温退火（350℃）后通过H_2附加溅射大大提高了接触孔中Cu的填充性能。将铜膜电镀在溅射的铜上。即使在Cu溅射过程中添加了H_2，电镀Cu表面的粗糙度也不取决于初始溅射的Cu表面的粗糙度。但是，可以通过晶种溅射的Cu膜的晶体取向来控制电镀Cu膜的晶体取向[（111）/（200）比]。即，通过在Cu溅射中添加H_2，可以使电镀Cu膜的晶体取向性良好。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号