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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors
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New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors

机译：InGaP / GaAs异质结双极晶体管的高掺杂n-GaAs上的新Cu / Mo / Ge / Pd欧姆接触

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摘要

The feasibility of using novel Cu/Mo/Ge/Pd ohmic contacts on n~+-GaAs for heterojunction bipolar transistors (HBTs) is investigated. The electrical and material characteristics of the Cu/Mo/Ge/Pd~+-GaAs structure were studied. After thermal annealing at 350 ℃, the specific contact resistances of the copper ohmic contacts Cu/Mo/Ge/Pd were measured to be 2.8 x 10~(-7) Ωcm~2. Judging from the data of sheet resistance, X-ray diffraction analysis, Auger electron spectroscopy, and transmission electron microscopy, the Cu/Mo/Ge/Pd contact structure was very stable after annealing at 350 ℃. However, after 400 ℃ annealing, the reaction of copper with the underneath layers started to occur and formed MoGe_2, Cu_3Ga and Ge_3Cu phases. An InGaP/GaAs HBT with Cu/Mo/Ge/Pd contact metals was fabricated and compared with an HBT fabricated with traditional Au/Ni/Ge/Au contact metals. These two kinds of HBTs showed similar device characteristics. After reaching thermal stability and performing a high current-accelerated stress test at a current density of 120kA/cm~2 for 24 h, the device with the Cu/Mo/Ge/Pd ohmic contacts still exhibits excellent electrical characteristics.
机译：研究了在异质结双极晶体管（HBT）上在n〜+ -GaAs上使用新颖的Cu / Mo / Ge / Pd欧姆接触的可行性。研究了Cu / Mo / Ge / Pd / n〜+ -GaAs结构的电学和材料特性。在350℃下进行热退火后，测得的铜欧姆接触Cu / Mo / Ge / Pd的比接触电阻为2.8 x 10〜（-7）Ωcm〜2。从薄层电阻，X射线衍射分析，俄歇电子能谱和透射电子显微镜的数据来看，Cu / Mo / Ge / Pd接触结构在350℃退火后非常稳定。然而，在400℃退火后，铜与下层的反应开始发生，并形成MoGe_2，Cu_3Ga和Ge_3Cu相。制备了具有Cu / Mo / Ge / Pd接触金属的InGaP / GaAs HBT，并将其与使用传统Au / Ni / Ge / Au接触金属制造的HBT进行了比较。这两种HBT显示出相似的器件特性。在达到热稳定性并在120kA / cm〜2的电流密度下进行高电流加速应力测试24小时后，具有Cu / Mo / Ge / Pd欧姆接触的器件仍表现出出色的电气特性。

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