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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO_2
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Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO_2

机译：SiO_2上薄Nb阻挡层上形成的择优取向Cu [111]层

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摘要

The texture of preferentially oriented Cu[111] deposited on a thin Nb layer is characterized in a thin-film stacked structure of Cu/Nb/SiO_2/Si in an attempt to prepare a Cu[111] seed layer of interconnects on an extremely thin diffusion barrier. The Cu[111] layer is obtained on Nb films of [110] orientation at various thicknesses; however, the mosaic spread of Cu[111] texture depends on the thickness of Nb film underneath. The full width at half maximum of the ω-rocking curve measurement is ～3° for the Cu[111] layer on a 100-nm-thick Nb layer, which increases to ～4 and ～5° for that on 20- and 10-nm-thick Nb layers, respectively. Transmission electron microscopy reveals the 10-nm-thick Nb layer consisting of fine relatively mosaic-spread [110] grains, which is a result of the initial stage of the nucleation type growth of the Nb film in a columnar structure on SiO_2. It is revealed that the Cu[111] texture of relatively good mosaicity in a columnar structure is obtained on an extremely thin Nb layer of 10nm thickness.
机译：沉积在薄Nb层上的择优取向Cu [111]的纹理的特征在于Cu / Nb / SiO_2 / Si的薄膜堆叠结构，试图在极薄的衬底上制备互连的Cu [111]籽晶层扩散屏障。在[110]取向的Nb膜上以各种厚度获得Cu [111]层；但是，Cu [111]织构的镶嵌分布取决于下面的Nb膜的厚度。厚度为100 nm的Nb层上的Cu [111]层，ω-摇摆曲线测量的半峰全宽为〜3°，对于20和10层的Cu [111]层，其增大为〜4和〜5° -nm厚的Nb层。透射电子显微镜显示Nb层厚10纳米，由相对精细的[110]细晶粒组成，这是Nb薄膜在SiO_2上呈柱状结构成核型生长的初始阶段的结果。揭示了在10nm厚的极薄Nb层上获得了柱状结构中相对良好的镶嵌性的Cu [111]织构。

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