首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
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Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface

机译:电极/基于Hf的介电界面上费米能级固定的机制:系统研究多晶硅和完全硅化的NiSi电极的有效功函数对界面Hf密度的依赖性

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摘要

We systematically investigated the dependence of the effective work functions (Φ_(eff)) for polycrystalline silicon (poly-Si) and fully silicided NiSi electrodes on Hf density at the electrode/dielectric interface in terms of Fermi level pinning (FLP). We found that the Φ_(eff) values agree with the values calculated using the interface gap states model with an extrinsic contribution, assuming that the interface gap state density is proportional to the product of Hf density in the dielectric and Si density in the electrode at the electrode/dielectric interface. On the basis of our results, we discuss the origins of FLP at the electrode/Hf-based dielectric interface.
机译:我们根据费米能级钉扎(FLP)系统研究了多晶硅(poly-Si)和完全硅化的NiSi电极的有效功函数(Φ_(eff))对Hf密度的依赖性。我们发现Φ_(eff)值与使用界面间隙状态模型计算的值具有外部贡献相符,假设界面间隙状态密度与电介质中Hf密度和电极上Si密度的乘积成比例。电极/电介质界面。根据我们的结果,我们讨论了基于电极/ Hf的介电界面上FLP的起源。

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