Silicon Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with Dual Work Function Gate

Kee-Yeol Na; Yeong-Seuk Kim

首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Silicon Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with Dual Work Function Gate

【24h】

Silicon Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with Dual Work Function Gate

机译：具有双功函数门的硅互补金属氧化物半导体场效应晶体管

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper discusses silicon complementary metal-oxide-semiconductor (CMOS) field-effect transistors with dual work function gates (DWFG) to improve transconductance (g_m) and drain conductance (g_(ds)) characteristics. For a n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) device, the polycrystalline silicon (poly-Si) gate on the source and drain side are doped p+ and n+, respectively and vice versa for a p-channel MOSFET. The work function difference in a poly-Si gate affects channel potential distribution and increases the lateral electric field inside the channel. The increased electric field inside the channel improves carrier drift velocity. Experimental results from the fabricated DWFG devices show improved g_m and g_(ds) over conventional single work function gate devices.

机译：本文讨论了具有双功函数门（DWFG）的硅互补金属氧化物半导体（CMOS）场效应晶体管，以提高跨导（g_m）和漏极电导（g_（ds））特性。对于n沟道金属氧化物半导体场效应晶体管（MOSFET）器件，源极和漏极侧的多晶硅（poly-Si）栅极分别掺杂p +和n +，反之亦然。。多晶硅栅极中的功函数差异会影响沟道电势分布并增加沟道内部的横向电场。通道内增加的电场改善了载流子漂移速度。所制造的DWFG器件的实验结果表明，与传统的单功函数门器件相比，g_m和g_（ds）有所提高。

著录项

来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2006年第12期|p.9033-9036|共4页
作者
Kee-Yeol Na; Yeong-Seuk Kim;
展开▼
作者单位

Dept. of Semiconductor Engineering, Chungbuk National University, Cheongju, Chungbuk 361-763, Korea;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
dual work function gate (DWFG); CMOS; transconductance; drain conductance;

机译：双功函数门（DWFG）;CMOS;跨导;漏极电导;

相似文献

外文文献
中文文献
专利

1. Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function [J] . Youn Sung Choi, Toshinori Numata, Toshikazu Nishida, Journal of Applied Physics . 2008,第6期

机译：机械应力对锗和硅p型金属氧化物半导体场效应晶体管的栅极隧穿电流及金属栅极功函数的影响
2. Dual-Metal Gate Technology with Metal-Inserted Full Silicide Stack and Ni-Rich Full Silicide Gate Electrodes Using a Single Ni-Rich Full Silicide Phase for Scaled High-k Complementary Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Masaru Kadoshima, Takeo Matsuki, Toshio Aminaka, Japanese journal of applied physics . 2009,第4issue2期

机译：双金属栅极技术，具有金属插入的全硅化物叠层和富镍的全硅化物栅电极，使用单个富镍的全硅化物相用于规模化的高k互补金属氧化物半导体场效应晶体管
3. Dual Metal/High-^ Gate-Last Complementary Metal-Oxide-Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness [J] . Yoshiaki Kikuchi, Hitoshi Wakabayashi, Masanori Tsukamoto, Japanese journal of applied physics . 2011,第8ISSUE1期

机译：具有SiBN膜的双金属/高栅极-后栅极互补金属氧化物半导体场效应晶体管及其在1 nm以下等效氧化物厚度的特性
4. Study of Work-Function Variation on Performance of Dual-Metal Gate Fin Field-Effect Transistor [C] . Tianyu YU, Liang DAI, Zhifeng ZHAO, International Conference on Machine Learning and Artificial Intelligence . 2020

机译：双金属栅极翅片场效应晶体管性能的工作功能变化研究
5. Design, characterization, and profile optimization of silicon-germanium complementary metal-oxide-semiconductor field effect transistors on silicon-on-sapphire (SOS). [D] . Mathew, Suraj Joseph. 1999

机译：蓝宝石上硅（SOS）上的硅锗互补金属氧化物半导体场效应晶体管的设计，表征和轮廓优化。
6. Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor [O] . K. Takase, Y. Ashikawa, G. Zhang, -1

机译：全方位栅InAs纳米线金属氧化物半导体场效应晶体管中的高度栅可调Rashba自旋轨道相互作用
7. Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures [O] . Li, Zuo, Husain, Muhammad, Yoshimoto, Hiroyuki, 2017

机译：在低温下在缩放的硅互补金属氧化物半导体场效应晶体管中单载流子捕获和去陷阱
8. Fabrication of n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with0.2 Micrometer Gate Lengths in 500 A Thin Film Silicon on Sapphire. (Reannouncement with New Availability Information) [R] . de la Houssaye, P. R., Offord, B. W., Minter, J. P., 1992

机译：在蓝宝石上的500 a薄膜硅中制造具有0.2微米栅极长度的n沟道金属氧化物半导体场效应晶体管。（重新公布新的可用性信息）

Silicon Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with Dual Work Function Gate

摘要

著录项

相似文献

相关主题

期刊订阅