...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire
【24h】

Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire

机译：蓝宝石上Pt / InGaN / GaN和Pt / GaN肖特基光电探测器中光电流的不同偏置电压依赖性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Two structures under back illumination showed opposite bias polarity dependence in the photocurrent of Schottky barrier contacts, where a combination of Pt/Au metal films was formed on unintentionally doped n-type layers. The contact with a 2-μm-thick GaN layer exhibited a higher photocurrent for reverse biasing as expected, whereas the same contact with an additional 20-nm-thick InGaN layer on GaN exhibited a much higher current for forward biasing. This current was maintained down to a small reverse bias voltage, which indicates that the thin InGaN layer with an In content of 15% behaves like a p-type semiconductor. The result can be understood by the internal electric field in the InGaN layer as well as the fact that 400 nm light illuminated from the back side is absorbed in the thin layer just under the contact metal.
机译：背面照明下的两种结构在肖特基势垒接触的光电流中显示出相反的偏置极性依赖性，其中Pt / Au金属膜的组合形成在无意掺杂的n型层上。与2μm厚的GaN层的接触显示出较高的反向偏置光电流，而与GaN上额外的20nm厚的InGaN层的接触显示出更高的正向偏置电流。将该电流维持在较小的反向偏置电压，这表明In含量为15％的InGaN薄层的行为类似于p型半导体。可以通过InGaN层中的内部电场以及从背面照射的400 nm光在接触金属正下方的薄层中吸收的事实来理解结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号