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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Extremely Low Noise Characteristics of 0.15 μm Power Metamorphic High-Electron-Mobility Transistors
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Extremely Low Noise Characteristics of 0.15 μm Power Metamorphic High-Electron-Mobility Transistors

机译：0.15μm功率变形高电子迁移率晶体管的极低噪声特性

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摘要

The DC and RF characteristics of a 0.15 μm GaAs power metamorphic high electron mobility transistor (MHEMT) have been investigated and consequently, 77-GHz-band-low-noise-amplifier (LNA) millimeter-wave monolithic integrated circuits (MMICs) were fabricated using the 0.15 μm power MHEMT device. The 0.15 x 100μm~2 MHEMT device showed a drain saturation current of 40.4 mA/mm, an extrinsic transconductance of 857 mS/mm, and a threshold voltage of —0.64 V. For the distributions of DC characteristics across a 100 mm wafer, the standard deviation of the threshold voltage and the maximum extrinsic transconductance were —0.64 ± 0.03 V and 810 ± 25mS/mm, respectively. The obtained cutoff frequency and maximum frequency of oscillation were 141 and 243 GHz, respectively. The 8 x 50 μm~2 MHEMT device showed a 33.2% PAE, an 18.1 dB power gain, and a 50.1 mW output power at 5.8 GHz. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz were obtained for the 0.15 x 100 μm~2 MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the marked reduction of gate resistance by the T-shaped gate with a wide head and the improved device performance. The fabricated LNA MMIC using a 0.15 x 100 μm~2 MHEMT device exhibited a small signal gain of 20 dB and a noise figure of 5.5 dB at a frequency range of 76 to 77 GHz.
机译：已经研究了0.15μmGaAs功率变质高电子迁移率晶体管（MHEMT）的DC和RF特性，因此，制造了77 GHz频带低噪声放大器（LNA）毫米波单片集成电路（MMIC）使用0.15μm功率的MHEMT器件。 0.15 x100μm〜2 MHEMT器件的漏极饱和电流为40.4 mA / mm，非本征跨导为857 mS / mm，阈值电压为-0.64V。对于100 mm晶片上DC特性的分布，阈值电压的标准偏差和最大非本征跨导分别为-0.64±0.03 V和810±25mS / mm。所获得的截止频率和最大振荡频率分别为141 GHz和243 GHz。 8 x 50μm〜2 MHEMT器件在5.8 GHz频率下具有33.2％的PAE，18.1 dB的功率增益和50.1 mW的输出功率。对于InGaAs通道中铟含量为53％的0.15 x 100μm〜2 MHEMT，在26 GHz时，获得了非常低的0.79 dB最小噪声系数和10.56 dB的相关增益。这种出色的噪声特性归因于宽头T型栅极显着降低了栅极电阻，并提高了器件性能。使用0.15 x 100μm〜2 MHEMT器件制造的LNA MMIC在76至77 GHz频率范围内表现出20 dB的小信号增益和5.5 dB的噪声系数。

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