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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >A Logarithmic Response Complementary Metal Oxide Semiconductor Image Sensor with Parasitic P-N-P Bipolar Junction Transistor
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A Logarithmic Response Complementary Metal Oxide Semiconductor Image Sensor with Parasitic P-N-P Bipolar Junction Transistor

机译：具有寄生P-N-P双极结型晶体管的对数响应互补金属氧化物半导体图像传感器

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摘要

Logarithmic-response complementary metal oxide semiconductor (CMOS) active pixel sensors provide a desirable attribute of wide dynamic range even with low supply voltages. In this paper, a log-mode pixel with employing parasitic P-N-P bipolar junction transistor (BJT) to amplify photo-current is investigated and optimized. A new log-mode cell with a calibration transistor is proposed to increase the output voltage swing as well as to reduce the fixed pattern noise. The measurement results demonstrate that, the output voltage swing of this new cell is enhanced by 4 x and fixed pattern noise (FPN) of a pixel array can be reduced by 10 x comparing to that of a conventional log-mode CMOS active pixel sensor.
机译：对数响应互补金属氧化物半导体（CMOS）有源像素传感器即使在低电源电压下也可提供宽动态范围的理想属性。本文研究并优化了采用寄生P-N-P双极结型晶体管（BJT）放大光电流的对数模式像素。提出了一种新的带有校准晶体管的对数模式单元，以增加输出电压摆幅并降低固定模式噪声。测量结果表明，与传统的对数模式CMOS有源像素传感器相比，此新单元的输出电压摆幅提高了4倍，像素阵列的固定图案噪声（FPN）可以降低10倍。

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