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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Series Resistance in n-GaN/AlN-Si Heterojunction Structure
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Series Resistance in n-GaN/AlN-Si Heterojunction Structure

机译：n-GaN / AlN / n-Si异质结结构中的串联电阻

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摘要

A nominally nondoped GaN was grown on an (111)Si substrate using an AlN intermediate layer and the electrical resistance of a GaN/AlN/Si heterojunction was studied in relation to the growth conditions of the AlN intermediate layer. Cross-sectional reflection electron microscopy (REM) images showed that the AlN intermediate layer is of pyramid-like microcrystals with a thin area in between. A clear correlation was found between the film thickness in the thin area and the apparent resistance of a sample. The growth conditions of the AlN intermediate layer were studied to achieve a low electrical resistance, maintaining the mirror flat surface morphology of a top GaN layer.
机译：使用AlN中间层在（111）Si衬底上生长名义上无掺杂的GaN，并研究了与AlN中间层的生长条件有关的GaN / AlN / Si异质结的电阻。横截面反射电子显微镜（REM）图像显示，AlN中间层是金字塔形的微晶，中间是薄区域。发现在薄区域中的膜厚度与样品的表观电阻之间存在明显的相关性。研究了AlN中间层的生长条件以实现低电阻，同时保持顶部GaN层的镜面平坦表面形态。

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