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Structural Changes of Y_2O_3 and La_2O_3 Films by Heat Treatment

机译:热处理对Y_2O_3和La_2O_3薄膜结构的影响

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摘要

Structural changes of Y_2O_3 films and La_2O_3 films deposited on some oxidized silicon substrates were studied using X-ray photoelectron spectroscopy (XPS), Secondary ion mass spectrometry (SIMS), and Fourier transform infrared spectroscopy attenuated total reflection method (FT-IR ATR). Y_2O_3 and La_2O_3 films on chemical oxide and NH_3 annealed oxy-nitride were prepared by the Low-pressure chemical vapor deposition (LPCVD) method using an lanthanide-dipivaloyl-methanate (Ln-DPM) complex. The Y_2O_3 film and the La_2O_3 film on the both kinds of substrate already contained a partly silicate structure at the interface side as a result of an interface reaction during the deposition process. During post deposition annealing, the whole film structure of the Y_2O_3 and the La_2O_3 on the chemical oxide changed to a silicate structure due to silicon diffusion with interface reaction. In the case of the Y_2O_3 film, this interface reaction can be suppressed using thermal oxy-nitride as the interfacial layer. In the case of the La_2O_3 film, the suppression effect using oxy-nitride was smaller than the case with the Y_2O_3 film. Also, it was found that there was a strong correlation between the structural change of the films and the change of flat-band-voltage of both Y_2O_3 and La_2O_3 MIS diodes during post-deposition-annealing.
机译:利用X射线光电子能谱(XPS),二次离子质谱(SIMS)和傅里叶变换红外光谱衰减全反射法(FT-IR ATR)研究了沉积在某些氧化硅衬底上的Y_2O_3薄膜和La_2O_3薄膜的结构变化。通过低压化学气相沉积(LPCVD)方法,使用镧系元素-二新戊酰基-甲酸酯(Ln-DPM)络合物,在化学氧化物和NH_3退火的氮氧化物上制备了Y_2O_3和La_2O_3膜。由于沉积过程中的界面反应,两种基板上的Y_2O_3膜和La_2O_3膜在界面侧已经包含部分硅酸盐结构。在沉积后退火期间,由于硅通过界面反应扩散,化学氧化物上的Y_2O_3和La_2O_3的整个膜结构变为硅酸盐结构。在Y_2O_3膜的情况下,使用热氮氧化物作为界面层可以抑制该界面反应。在La_2O_3膜的情况下,使用氧氮化物的抑制效果比在Y_2O_3膜的情况下小。此外,还发现在沉积后退火期间,薄膜的结构变化与Y_2O_3和La_2O_3 MIS二极管的平带电压变化之间存在很强的相关性。

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